Epitaxial growth of GaNAs/GaAs heterostructure materials
文献类型：会议论文
| 作者 | Lin YW ; Pan Z ; Li LH ; Zhou ZQ ; Wang H ; Zhang W |
| 出版日期 | 2000 |
| 会议名称 | 1st asian conference on chemical vapour deposition |
| 会议日期 | may 10-13, 1999 |
| 会议地点 | shanghai, peoples r china |
| 关键词 | GaNAs DC active N-2 plasma molecular beam epitaxy nitrogen content Fourier transform infrared spectroscopy of intensity BAND-GAP ENERGY GAAS1-XNX NITROGEN |
| 页码 | 249-252 |
| 通讯作者 | lin yw chinese acad sci inst semicond pob 912 beijing 100083 peoples r china. |
| 中文摘要 | a series of systematic experiments on the growth of high quality ganas strained layers on gaas (001) substrate have been carried out by using dc active nz plasma, assisted molecular beam epitaxy. the samples of ganas between 3 and 200 nm thick were evaluated by double crystal x-ray diffraction (xrd) and photoluminescence (pl) measurements. pl and xrd measurements for these samples are in good agreement. some material growth and structure parameters affecting the properties of ganas/gaas heterostructure were studied; they were: (1) growth temperature of ganas epilayer; (2) electrical current of active n-2 plasma; (3) nz flow rate; (4) ganas growth rate; (5) the thickness of ganas strained layer. xrd and pl measurements showed that superlattice with distinct satellite peaks up to two orders and quantum well structure with intensity at 22 mev fourier transform infrared spectroscopy (fwhm) can be achieved in molecular beam epitaxy (mbe) system. (c) 2000 published by elsevier science s.a. all rights reserved. |
| 英文摘要 | a series of systematic experiments on the growth of high quality ganas strained layers on gaas (001) substrate have been carried out by using dc active nz plasma, assisted molecular beam epitaxy. the samples of ganas between 3 and 200 nm thick were evaluated by double crystal x-ray diffraction (xrd) and photoluminescence (pl) measurements. pl and xrd measurements for these samples are in good agreement. some material growth and structure parameters affecting the properties of ganas/gaas heterostructure were studied; they were: (1) growth temperature of ganas epilayer; (2) electrical current of active n-2 plasma; (3) nz flow rate; (4) ganas growth rate; (5) the thickness of ganas strained layer. xrd and pl measurements showed that superlattice with distinct satellite peaks up to two orders and quantum well structure with intensity at 22 mev fourier transform infrared spectroscopy (fwhm) can be achieved in molecular beam epitaxy (mbe) system. (c) 2000 published by elsevier science s.a. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:23导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:23z (gmt). no. of bitstreams: 1 2950.pdf: 199837 bytes, checksum: c1d600876d50e92f18018cfd76e453f7 (md5) previous issue date: 2000; chinese vacuum soc, thin films comm.; chinese electr soc, thin films comm.; nat sci fdn.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | chinese vacuum soc, thin films comm.; chinese electr soc, thin films comm.; nat sci fdn. |
| 会议录 | thin solid films, 368 (2)
 |
| 会议录出版者 | elsevier science sa ; po box 564, 1001 lausanne, switzerland |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 564, 1001 lausanne, switzerland |
| 语种 | 英语 |
| ISSN号 | 0040-6090 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14979]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Lin YW,Pan Z,Li LH,et al. Epitaxial growth of GaNAs/GaAs heterostructure materials[C]. 见:1st asian conference on chemical vapour deposition. shanghai, peoples r china. may 10-13, 1999. |
入库方式： OAI收割
来源：半导体研究所
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