Electronic characteristics of InAs self-assembled quantum dots
文献类型：会议论文
| 作者 | Wang HL ; Feng SL ; Zhu HJ ; Ning D ; Chen F |
| 出版日期 | 2000 |
| 会议名称 | 9th international conference on modulated semiconductor structures (mss9) |
| 会议日期 | jul 12-16, 1999 |
| 会议地点 | fukuoka, japan |
| 关键词 | InAs/GaAs quantum dots self-assembled structure DLTS PL band offset ENERGY-LEVELS CARRIER RELAXATION SPECTROSCOPY |
| 页码 | 383-387 |
| 通讯作者 | wang hl qufu normal univ dept phys qufu 273165 peoples r china. |
| 中文摘要 | deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled inas quantum dots formed in gaas matrices. the use of n- and p-type gaas matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. from analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 mev below the bottom of the gaas conduction band and heavy-hole levels at 90 mev above the top of the gaas valence band. combining with the photoluminescence results, the band structures of inas and gaas have been determined. (c) 2000 elsevier science b.v. all rights reserved. |
| 英文摘要 | deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled inas quantum dots formed in gaas matrices. the use of n- and p-type gaas matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. from analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 mev below the bottom of the gaas conduction band and heavy-hole levels at 90 mev above the top of the gaas valence band. combining with the photoluminescence results, the band structures of inas and gaas have been determined. (c) 2000 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:24导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:24z (gmt). no. of bitstreams: 1 2953.pdf: 107944 bytes, checksum: f941fc53701774eea62e58f9afe06007 (md5) previous issue date: 2000; japan soc appl phys.; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | japan soc appl phys. |
| 会议录 | physica e-low-dimensional systems & nanostructures, 7 (3-4)
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体物理 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 1386-9477 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14985]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang HL,Feng SL,Zhu HJ,et al. Electronic characteristics of InAs self-assembled quantum dots[C]. 见:9th international conference on modulated semiconductor structures (mss9). fukuoka, japan. jul 12-16, 1999. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。