中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electronic characteristics of InAs self-assembled quantum dots

文献类型:会议论文

作者Wang HL ; Feng SL ; Zhu HJ ; Ning D ; Chen F
出版日期2000
会议名称9th international conference on modulated semiconductor structures (mss9)
会议日期jul 12-16, 1999
会议地点fukuoka, japan
关键词InAs/GaAs quantum dots self-assembled structure DLTS PL band offset ENERGY-LEVELS CARRIER RELAXATION SPECTROSCOPY
页码383-387
通讯作者wang hl qufu normal univ dept phys qufu 273165 peoples r china.
中文摘要deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled inas quantum dots formed in gaas matrices. the use of n- and p-type gaas matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. from analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 mev below the bottom of the gaas conduction band and heavy-hole levels at 90 mev above the top of the gaas valence band. combining with the photoluminescence results, the band structures of inas and gaas have been determined. (c) 2000 elsevier science b.v. all rights reserved.
英文摘要deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled inas quantum dots formed in gaas matrices. the use of n- and p-type gaas matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. from analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 mev below the bottom of the gaas conduction band and heavy-hole levels at 90 mev above the top of the gaas valence band. combining with the photoluminescence results, the band structures of inas and gaas have been determined. (c) 2000 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:24导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:24z (gmt). no. of bitstreams: 1 2953.pdf: 107944 bytes, checksum: f941fc53701774eea62e58f9afe06007 (md5) previous issue date: 2000; japan soc appl phys.; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
收录类别CPCI-S
会议主办者japan soc appl phys.
会议录physica e-low-dimensional systems & nanostructures, 7 (3-4)
会议录出版者elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
学科主题半导体物理
会议录出版地po box 211, 1000 ae amsterdam, netherlands
语种英语
ISSN号1386-9477
源URL[http://ir.semi.ac.cn/handle/172111/14985]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Wang HL,Feng SL,Zhu HJ,et al. Electronic characteristics of InAs self-assembled quantum dots[C]. 见:9th international conference on modulated semiconductor structures (mss9). fukuoka, japan. jul 12-16, 1999.

入库方式: OAI收割

来源:半导体研究所

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