The fabrication of thick SiO2 layer by anodization
文献类型：会议论文
| 作者 | Ou HY ; Yang QQ ; Lei HB ; Wang QM ; Hu XW |
| 出版日期 | 2000 |
| 会议名称 | international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99) |
| 会议日期 | jun 13-18, 1999 |
| 会议地点 | beijing, peoples r china |
| 关键词 | thick SiO2 layer porous silicon SiO2/Si waveguide device WAVE-GUIDES SILICON |
| 页码 | 271-275 |
| 通讯作者 | ou hy chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china. |
| 中文摘要 | silicon-based silica waveguide (sio2/si) devices have huge applications in optical telecommunication. sio2 up to 25-mu m thick is necessary for some passive sio2/si waveguide devices. oxidizing porous silicon to obtain thick sio2 as cladding layer is presented. the experimental results of porous layer and oxidized porous layer formation were given. the relationship between cracking of sio2 and temperature varying rate was given experimentally. such conclusions are drawn: oxidation rate of porous silicon is several orders faster than that of bulk silicon; appropriate temperature variation rate during oxidation can prevent sio2 on silicon substrates from cracking, and 25 mu m thick silicon dioxide layer has been obtained. (c) 2000 elsevier science b.v. all rights reserved. |
| 英文摘要 | silicon-based silica waveguide (sio2/si) devices have huge applications in optical telecommunication. sio2 up to 25-mu m thick is necessary for some passive sio2/si waveguide devices. oxidizing porous silicon to obtain thick sio2 as cladding layer is presented. the experimental results of porous layer and oxidized porous layer formation were given. the relationship between cracking of sio2 and temperature varying rate was given experimentally. such conclusions are drawn: oxidation rate of porous silicon is several orders faster than that of bulk silicon; appropriate temperature variation rate during oxidation can prevent sio2 on silicon substrates from cracking, and 25 mu m thick silicon dioxide layer has been obtained. (c) 2000 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:26导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:26z (gmt). no. of bitstreams: 1 2958.pdf: 189607 bytes, checksum: 284250df88da8662287bf0edff27e8ea (md5) previous issue date: 2000; int union mat res soc.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; natl res ctr optoelect technol, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | int union mat res soc. |
| 会议录 | optical materials, 14 (3)
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0925-3467 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14995]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ou HY,Yang QQ,Lei HB,et al. The fabrication of thick SiO2 layer by anodization[C]. 见:international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99). beijing, peoples r china. jun 13-18, 1999. |
入库方式： OAI收割
来源：半导体研究所
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