Semi-insulating GaAs grown in outer space
文献类型：会议论文
| 作者 | Chen NF ; Zhong XR ; Lin LY ; Xie X ; Zhang M |
| 出版日期 | 2000 |
| 会议名称 | iumrs international conference of advanced materials |
| 会议日期 | jun 13-18, 1999 |
| 会议地点 | beijing, peoples r china |
| 关键词 | GaAs outer space microgravity integrated circuit SEMIINSULATING GALLIUM-ARSENIDE LEC-GAAS DEFECTS STOICHIOMETRY SEGREGATION CARBON BORON |
| 页码 | 134-138 |
| 通讯作者 | chen nf chinese acad sci inst semicond lab semicond mat sci pob 912 beijing 100083 peoples r china. |
| 中文摘要 | a semi-insulating gaas single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. the characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in gaas single crystal was used to analyze the space-grown gaas single crystal. the distribution of stoichiometry in a gaas wafer was measured for the first time. the electrical, optical and structural properties of the space-grown gaas crystal were studied systematically, device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating gaas wafers has a close correlation with the crystal's stoichiometry. (c) 2000 elsevier science s.a. all rights reserved. |
| 英文摘要 | a semi-insulating gaas single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. the characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in gaas single crystal was used to analyze the space-grown gaas single crystal. the distribution of stoichiometry in a gaas wafer was measured for the first time. the electrical, optical and structural properties of the space-grown gaas crystal were studied systematically, device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating gaas wafers has a close correlation with the crystal's stoichiometry. (c) 2000 elsevier science s.a. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:26导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:26z (gmt). no. of bitstreams: 1 2959.pdf: 162449 bytes, checksum: 3550c8cad372bdea087e0ab4f2ef190b (md5) previous issue date: 2000; iumrs.; amer xtal technol.; sut associates.; univ calif san diego.; shanghai inst met.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; cast, lanzhou inst phys, lanzhou 625065, peoples r china; hebei inst semicond, shijiazhuang 050002, hebei, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | iumrs.; amer xtal technol.; sut associates.; univ calif san diego.; shanghai inst met. |
| 会议录 | materials science and engineering b-solid state materials for advanced technology, 75 (2-3)
 |
| 会议录出版者 | elsevier science sa ; po box 564, 1001 lausanne, switzerland |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 564, 1001 lausanne, switzerland |
| 语种 | 英语 |
| ISSN号 | 0921-5107 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14997]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen NF,Zhong XR,Lin LY,et al. Semi-insulating GaAs grown in outer space[C]. 见:iumrs international conference of advanced materials. beijing, peoples r china. jun 13-18, 1999. |
入库方式： OAI收割
来源：半导体研究所
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