Structural properties of SI-GaAs grown in space
文献类型：会议论文
| 作者 | Chen NF ; Wang YT ; Zhong XR ; Lin LY |
| 出版日期 | 1999 |
| 会议名称 | g0 1 symposium of cospar scientific commission g held at the 32nd cospar scientific assembly |
| 会议日期 | jul 12-19, 1998 |
| 会议地点 | nagoya, japan |
| 关键词 | SEMIINSULATING GALLIUM-ARSENIDE MICROGRAVITY STOICHIOMETRY |
| 页码 | 1211-1214 |
| 通讯作者 | chen nf chinese acad sci inst semicond lab semicond mat sci pob 912 beijing 100083 peoples r china. |
| 中文摘要 | the structural properties of semi-insulating gallium arsenide (si-gaas) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. the quality of the crystal was first evaluated by x-ray rocking-curve method. the full width at half maximum of x-ray rocking curve in space-grown si-gaas is 9.4+/-0.08 are seconds. the average density of dislocations revealed by molten koh is 2.0 x 10(4) cm(-2), and the highest density is 3.1 x 10(4) cm(-2). the stoichiometry in the single crystal grown in space is improved as well. unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. (c) 1999 cospar. published by elsevier science ltd. |
| 英文摘要 | the structural properties of semi-insulating gallium arsenide (si-gaas) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. the quality of the crystal was first evaluated by x-ray rocking-curve method. the full width at half maximum of x-ray rocking curve in space-grown si-gaas is 9.4+/-0.08 are seconds. the average density of dislocations revealed by molten koh is 2.0 x 10(4) cm(-2), and the highest density is 3.1 x 10(4) cm(-2). the stoichiometry in the single crystal grown in space is improved as well. unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. (c) 1999 cospar. published by elsevier science ltd.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:28导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:28z (gmt). no. of bitstreams: 0 previous issue date: 1999; comm space res.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | comm space res. |
| 会议录 | gravitational effects in materials and fluid sciences, 24 (10)
 |
| 会议录出版者 | pergamon press ltd ; the boulevard langford lane kidlington, oxford ox5 1gb, england |
| 学科主题 | 半导体材料 |
| 会议录出版地 | the boulevard langford lane kidlington, oxford ox5 1gb, england |
| 语种 | 英语 |
| ISSN号 | 0273-1177 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15011]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen NF,Wang YT,Zhong XR,et al. Structural properties of SI-GaAs grown in space[C]. 见:g0 1 symposium of cospar scientific commission g held at the 32nd cospar scientific assembly. nagoya, japan. jul 12-19, 1998. |
入库方式： OAI收割
来源：半导体研究所
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