Crystallographic and magnetic properties of hydride R3Fe29-xTxHy (R=Y, Ce, Nd, Sm, Gd, Tb and Dy; T=V and Cr)
文献类型：会议论文
| 作者 | Han XF ; Lin LY ; Baggio-Saitovitch E ; Xu RG ; Wang XH ; Pan HG |
| 出版日期 | 1999 |
| 会议名称 | 4th latin american workshop on magnetism, magnetic materials and their applications |
| 会议日期 | jun 07-11, 1998 |
| 会议地点 | sao paulo, brazil |
| 关键词 | magnetic properties hydride hydrogenation saturation magnetization curie temperature first-order magnetization process R3Fe29-xTxHy R = Y |
| 页码 | 294-298 |
| 通讯作者 | han xf chinese acad sci inst semicond ctr mat sci pob 912 beijing 100083 peoples r china. |
| 中文摘要 | the crystallographic and intrinsic magnetic properties of hydride r3fe29-xtxhy (r=y, ce, nd, sm, gd, tb, and dy; t=v and cr) have been investigated. the lattice constants and the unit cell volume of r3fe29-xtxhy decrease with increasing r atomic number from nd to dy, except for ce, reflecting the lanthanide contraction. regular anisotropic expansions, mainly along the a- and b-axis rather than along the c-axis, are observed for all the compounds upon hydrogenation. hydrogenation leads to an increase in curie temperature. first-order magnetization processes (fomp) occur in magnetic fields of around 1.5 t and 4.0 t at 4.2 k for nd3fe24.5cr4.5h5.0 and tb(3)fc(27.0)cr(2.0)h(2.8), and around 1.4 t at room temperature for gd3fe28.0cr1.0h4.2 abnormal crystallographic and magnetic properties of ce3fe29-xtxhy suggest that the ce ion is non-triply ionized. |
| 英文摘要 | the crystallographic and intrinsic magnetic properties of hydride r3fe29-xtxhy (r=y, ce, nd, sm, gd, tb, and dy; t=v and cr) have been investigated. the lattice constants and the unit cell volume of r3fe29-xtxhy decrease with increasing r atomic number from nd to dy, except for ce, reflecting the lanthanide contraction. regular anisotropic expansions, mainly along the a- and b-axis rather than along the c-axis, are observed for all the compounds upon hydrogenation. hydrogenation leads to an increase in curie temperature. first-order magnetization processes (fomp) occur in magnetic fields of around 1.5 t and 4.0 t at 4.2 k for nd3fe24.5cr4.5h5.0 and tb(3)fc(27.0)cr(2.0)h(2.8), and around 1.4 t at room temperature for gd3fe28.0cr1.0h4.2 abnormal crystallographic and magnetic properties of ce3fe29-xtxhy suggest that the ce ion is non-triply ionized.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:29导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:29z (gmt). no. of bitstreams: 1 3002.pdf: 400672 bytes, checksum: 711c1388612ca8b7caf002097c448b65 (md5) previous issue date: 1999; fundacao amparo pesquisa estado sao paulo.; conselho nacl desenvolvimento cient & tecnologico.; coordenadoria aperfeicoamento pessoal nivel super.; universidad sao paulo, pro reitoria pesquisa.; centro latino americano fis.; int ctr theoret phys.; int union crystallog.; cga analit.; chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china; ctr brasileiro pesquisas fis, rio de janeiro, brazil; zhejiang univ, dept mat, hangzhou 310027, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | fundacao amparo pesquisa estado sao paulo.; conselho nacl desenvolvimento cient & tecnologico.; coordenadoria aperfeicoamento pessoal nivel super.; universidad sao paulo, pro reitoria pesquisa.; centro latino americano fis.; int ctr theoret phys.; int union crystallog.; cga analit. |
| 会议录 | magnetism, magnetic materials and their applications, 302-3
 |
| 会议录出版者 | transtec publications ltd ; brandrain 6, ch-8707 zurich-uetikon, switzerland |
| 学科主题 | 半导体材料 |
| 会议录出版地 | brandrain 6, ch-8707 zurich-uetikon, switzerland |
| 语种 | 英语 |
| ISSN号 | 0255-5476 |
| ISBN号 | 0-87849-827-3 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15021]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han XF,Lin LY,Baggio-Saitovitch E,et al. Crystallographic and magnetic properties of hydride R3Fe29-xTxHy (R=Y, Ce, Nd, Sm, Gd, Tb and Dy; T=V and Cr)[C]. 见:4th latin american workshop on magnetism, magnetic materials and their applications. sao paulo, brazil. jun 07-11, 1998. |
入库方式： OAI收割
来源：半导体研究所
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