The effects of carbonized buffer layer on the growth of SiC on Si
文献类型：会议论文
| 作者 | Wang YS ; Li JM ; Zhang FF ; Lin LY |
| 出版日期 | 1999 |
| 会议名称 | 10th international conference on molecular beam epitaxy (mbe-x) |
| 会议日期 | aug 31-sep 04, 1998 |
| 会议地点 | cannes, france |
| 关键词 | HETEROEPITAXIAL GROWTH HYDROCARBON RADICALS SI(001) SURFACE BEAM |
| 页码 | 564-567 |
| 通讯作者 | wang ys chinese acad sci inst semicond beijing 100083 peoples r china. |
| 中文摘要 | carbonized buffer layers were formed with c2h4 on si(100) and si(111) substrates using different methods and sic epilayers were grown on each buffer layer at 1050 degrees c with simultaneous supply of c2h4 and si2h6. the structure of carbonized and epitaxy layers was analyzed with in situ rheed. the buffer layers formed at 800 degrees c were polycrystalline on both si(100) and si(111) substrates whereas they were single crystals, with twins on si(100) and without tu ins on si(111)substrates. when formed with a gradual rise in substrate temperature from 300 degrees c to growth temperature. raising the substrate temperature slowly results in the formation of more twins. epilayers grown on carbonized polycrystalline lavers are polycrystalline. single crystal epilayers without twins grow on single crystalline buffer layers without twins or with a few twins. (c) 1999 elsevier science b.v. all rights reserved. |
| 英文摘要 | carbonized buffer layers were formed with c2h4 on si(100) and si(111) substrates using different methods and sic epilayers were grown on each buffer layer at 1050 degrees c with simultaneous supply of c2h4 and si2h6. the structure of carbonized and epitaxy layers was analyzed with in situ rheed. the buffer layers formed at 800 degrees c were polycrystalline on both si(100) and si(111) substrates whereas they were single crystals, with twins on si(100) and without tu ins on si(111)substrates. when formed with a gradual rise in substrate temperature from 300 degrees c to growth temperature. raising the substrate temperature slowly results in the formation of more twins. epilayers grown on carbonized polycrystalline lavers are polycrystalline. single crystal epilayers without twins grow on single crystalline buffer layers without twins or with a few twins. (c) 1999 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:31导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:31z (gmt). no. of bitstreams: 1 3010.pdf: 164610 bytes, checksum: 5f534329d2089c28be5d8fdffd66063b (md5) previous issue date: 1999; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | journal of crystal growth, 201
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0022-0248 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15037]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang YS,Li JM,Zhang FF,et al. The effects of carbonized buffer layer on the growth of SiC on Si[C]. 见:10th international conference on molecular beam epitaxy (mbe-x). cannes, france. aug 31-sep 04, 1998. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。