Self-organization of the InGaAs GaAs quantum dots superlattice
文献类型：会议论文
| 作者 | Zhuang QD ; Li HX ; Pan L ; Li JM ; Kong MY ; Lin LY |
| 出版日期 | 1999 |
| 会议名称 | 10th international conference on molecular beam epitaxy (mbe-x) |
| 会议日期 | aug 31-sep 04, 1998 |
| 会议地点 | cannes, france |
| 关键词 | X-RAY-DIFFRACTION ISLANDS SURFACES GROWTH |
| 页码 | 1161-1163 |
| 通讯作者 | zhuang qd chinese acad sci inst semicond novel mat ctr beijing 100083 peoples r china. |
| 中文摘要 | the mechanism of self-organization of quantum dots (qds) during the growth of ingaas/gaas multilayers on gaas (1 0 0) was investigated with cross-sectional transmission electron microscopy (xtem), and double-crystal x-ray diffraction (dcxd). we found that the qds spacing in the first layer can affect the vertical alignment of qds. there seems to exist one critical lateral qd spacing, below which merging of qds with different initial size is found to be the dominant mechanism leading to perfect vertical alignment. once the critical value of qds spacing is reached, the ingaas qds of the first layer are simply reproduced in the upper layers. the x-ray rocking curve clearly shows two sets of satellite peaks, which correspond to the qds superlattice, and multi-quantum wells (qw) formed by the wetting layers around qds. (c) 1999 elsevier science b.v. all rights reserved. |
| 英文摘要 | the mechanism of self-organization of quantum dots (qds) during the growth of ingaas/gaas multilayers on gaas (1 0 0) was investigated with cross-sectional transmission electron microscopy (xtem), and double-crystal x-ray diffraction (dcxd). we found that the qds spacing in the first layer can affect the vertical alignment of qds. there seems to exist one critical lateral qd spacing, below which merging of qds with different initial size is found to be the dominant mechanism leading to perfect vertical alignment. once the critical value of qds spacing is reached, the ingaas qds of the first layer are simply reproduced in the upper layers. the x-ray rocking curve clearly shows two sets of satellite peaks, which correspond to the qds superlattice, and multi-quantum wells (qw) formed by the wetting layers around qds. (c) 1999 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:31导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:31z (gmt). no. of bitstreams: 1 3011.pdf: 133474 bytes, checksum: be4a8e890233eb3306fea2c0e07b641c (md5) previous issue date: 1999; chinese acad sci, inst semicond, novel mat ctr, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | journal of crystal growth, 201
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0022-0248 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15039]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhuang QD,Li HX,Pan L,et al. Self-organization of the InGaAs GaAs quantum dots superlattice[C]. 见:10th international conference on molecular beam epitaxy (mbe-x). cannes, france. aug 31-sep 04, 1998. |
入库方式： OAI收割
来源：半导体研究所
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