Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)
文献类型：会议论文
| 作者 | Xu B
|
| 出版日期 | 1999 |
| 会议名称 | 40th electronic materials conference (emc-40) |
| 会议日期 | jun 24-26, 1998 |
| 会议地点 | charlottesville, virginia |
| 关键词 | bimodal distribution photoluminescence (PL) quantum-size effect GE ENSEMBLES SI(100) GROWTH SHAPE |
| 页码 | 528-531 |
| 通讯作者 | zhou w chinese acad sci lab semicond mat sci inst semicond pob 912 beijing 100083 peoples r china. |
| 中文摘要 | red-emission at similar to 640 nm from self-assembled in0.55al0.45as/al0.5ga0.5as quantum dots grown on gaas substrate by molecular beam epitaxy (mbe) has been demonstrated. we obtained a double-peak structure of photoluminescence (pl) spectra from quantum dots. an atomic force micrograph (afm) image for uncapped sample also shows a bimodal distribution of dot sizes. from the temperature and excitation intensity dependence of pl spectra, we found that the double-peak structure of pl spectra from quantum dots was strongly correlated to the two predominant quantum dot families. taking into account quantum-size effect on the peak energy, we propose that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical with the statistical distribution of dot lateral size from the afm image. |
| 英文摘要 | red-emission at similar to 640 nm from self-assembled in0.55al0.45as/al0.5ga0.5as quantum dots grown on gaas substrate by molecular beam epitaxy (mbe) has been demonstrated. we obtained a double-peak structure of photoluminescence (pl) spectra from quantum dots. an atomic force micrograph (afm) image for uncapped sample also shows a bimodal distribution of dot sizes. from the temperature and excitation intensity dependence of pl spectra, we found that the double-peak structure of pl spectra from quantum dots was strongly correlated to the two predominant quantum dot families. taking into account quantum-size effect on the peak energy, we propose that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical with the statistical distribution of dot lateral size from the afm image.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:32导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:32z (gmt). no. of bitstreams: 1 3013.pdf: 220106 bytes, checksum: 9716a0c0904fdda30ab9aaa4c0675978 (md5) previous issue date: 1999; tms.; chinese acad sci, lab semicond mat sci, inst semicond, beijing 100083, peoples r china; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | tms. |
| 会议录 | journal of electronic materials, 28 (5)
 |
| 会议录出版者 | minerals metals materials soc ; 420 commonwealth dr, warrendale, pa 15086 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 420 commonwealth dr, warrendale, pa 15086 usa |
| 语种 | 英语 |
| ISSN号 | 0361-5235 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15043]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)[C]. 见:40th electronic materials conference (emc-40). charlottesville, virginia. jun 24-26, 1998. |
入库方式： OAI收割
来源：半导体研究所
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