中国科学院机构知识库网格系统: First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

文献类型：会议论文


作者	Li Z ; Dezilllie B ; Eremin V ; Li CJ ; Verbitskaya E
出版日期	1999
会议名称	2nd international conference on radiation effects on semiconductor materials, detectors and devices
会议日期	mar 04-06, 1998
会议地点	florence, italy
关键词	strip detectors silicon detectors annealing simulation irradiation N-EFF JUNCTION DETECTORS RADIATION-DAMAGE MODELS
页码	38-46
通讯作者	li z brookhaven natl lab bldg 535bpob 5000 upton ny 11973 usa.
中文摘要	test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k ohm cm). detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. it has been found that for a bias of 250 v a strip detector made of 1.3 k ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). for a 500 mu m pitch strip detector made of 2.7 k ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. we demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. we also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in si at rt) laser, which provides a simulation of mip particles in high-physics experiments in terms of charge collection and position reconstruction, (c) 1999 elsevier science b.v. all rights reserved.
英文摘要	test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k ohm cm). detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. it has been found that for a bias of 250 v a strip detector made of 1.3 k ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). for a 500 mu m pitch strip detector made of 2.7 k ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. we demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. we also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in si at rt) laser, which provides a simulation of mip particles in high-physics experiments in terms of charge collection and position reconstruction, (c) 1999 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:32导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:32z (gmt). no. of bitstreams: 1 3015.pdf: 439849 bytes, checksum: 9feb002c02d7a3cfab1fdd4fce186ba4 (md5) previous issue date: 1999; univ florence.; ist nazl fis nucl.; brookhaven natl lab, upton, ny 11973 usa; ras, af ioffe physicotech inst, st petersburg, russia; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	univ florence.; ist nazl fis nucl.
会议录	nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 426 (1)
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体物理
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
语种	英语
ISSN号	0168-9002
源URL	[http://ir.semi.ac.cn/handle/172111/15047]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li Z,Dezilllie B,Eremin V,et al. First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)[C]. 见:2nd international conference on radiation effects on semiconductor materials, detectors and devices. florence, italy. mar 04-06, 1998.

入库方式： OAI收割

来源：半导体研究所

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First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

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