中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials

文献类型:会议论文

作者Zou LF ; Acosta-Ortiz SE ; Zou LX ; Regalado LE ; Sun DZ ; Wang ZG
出版日期1998
会议名称14th latin american symposiumm on solid state physics
会议日期jan 11-16, 1998
会议地点oaxaca, mexico
关键词STRAIN RELAXATION HETEROSTRUCTURES
页码93-96
通讯作者zou lf ctr invest opt ac unidad aguascalientes juan montoro 207zona ctr aguascalientes 20000 ags mexico. 电子邮箱地址: lfzou@ags.ciateq.mx
中文摘要gas source molecular beam epitaxy has been used to grow si1-xgex alloys and si1-xgex/si multi-quantum wells (mqws) on (100) si substrates with si2h6 and geh4 as sources. heterostructures and mqws with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. the structural stability and strain relaxation in si1-xgex/si heterostructures have been investigated, and compared to that in the as ion-implanted si1-xgex epilayers. the results show that the strain relaxation mechanism of the non-implanted si1-xgex epilayers is different from that of the as ion-implanted si1-xgex epilayers.
收录类别CPCI-S
会议录revista mexicana de fisica, 44
会议录出版者sociedad mexicana de fisica ; apartado postal 70-348, coyoacan 04511, mexico
学科主题半导体物理
会议录出版地apartado postal 70-348, coyoacan 04511, mexico
语种英语
ISSN号0035-001x
源URL[http://ir.semi.ac.cn/handle/172111/15057]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zou LF,Acosta-Ortiz SE,Zou LX,et al. Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials[C]. 见:14th latin american symposiumm on solid state physics. oaxaca, mexico. jan 11-16, 1998.

入库方式: OAI收割

来源:半导体研究所

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