Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials
文献类型：会议论文
| 作者 | Zou LF ; Acosta-Ortiz SE ; Zou LX ; Regalado LE ; Sun DZ ; Wang ZG |
| 出版日期 | 1998 |
| 会议名称 | 14th latin american symposiumm on solid state physics |
| 会议日期 | jan 11-16, 1998 |
| 会议地点 | oaxaca, mexico |
| 关键词 | STRAIN RELAXATION HETEROSTRUCTURES |
| 页码 | 93-96 |
| 通讯作者 | zou lf ctr invest opt ac unidad aguascalientes juan montoro 207zona ctr aguascalientes 20000 ags mexico. 电子邮箱地址: lfzou@ags.ciateq.mx |
| 中文摘要 | gas source molecular beam epitaxy has been used to grow si1-xgex alloys and si1-xgex/si multi-quantum wells (mqws) on (100) si substrates with si2h6 and geh4 as sources. heterostructures and mqws with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. the structural stability and strain relaxation in si1-xgex/si heterostructures have been investigated, and compared to that in the as ion-implanted si1-xgex epilayers. the results show that the strain relaxation mechanism of the non-implanted si1-xgex epilayers is different from that of the as ion-implanted si1-xgex epilayers. |
| 收录类别 | CPCI-S |
| 会议录 | revista mexicana de fisica, 44
 |
| 会议录出版者 | sociedad mexicana de fisica ; apartado postal 70-348, coyoacan 04511, mexico |
| 学科主题 | 半导体物理 |
| 会议录出版地 | apartado postal 70-348, coyoacan 04511, mexico |
| 语种 | 英语 |
| ISSN号 | 0035-001x |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15057]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zou LF,Acosta-Ortiz SE,Zou LX,et al. Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials[C]. 见:14th latin american symposiumm on solid state physics. oaxaca, mexico. jan 11-16, 1998. |
入库方式： OAI收割
来源：半导体研究所
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