New method for the growth of highly uniform quantum dots
文献类型：会议论文
| 作者 | Pan D ; Zeng YP ; Kong MY |
| 出版日期 | 1998 |
| 会议名称 | 2nd international conference on low dimensional structures and devices |
| 会议日期 | may 19-21, 1997 |
| 会议地点 | lisbon, portugal |
| 关键词 | self-formed quantum dot Stranski-Krastanow growth mode superlattice MOLECULAR-BEAM EPITAXY INGAAS GAAS DISLOCATIONS MULTILAYERS DEFECTS STRAIN |
| 页码 | 79-83 |
| 通讯作者 | pan d chinese acad sci inst semicond mat ctr pob 912 beijing 100083 peoples r china. 电子邮箱地址: dongpan@red.senu.ac.cn |
| 中文摘要 | a new method is realized for the growth of self-formed quantum dots. we identify that dislocation-free islands can be formed by the strain from the strained superlattice taken as a whole. unlike the stranski-krastanow (s-k) growth mode, the islands do not form during the growth of the corresponding strained single layers. highly uniform quantum dots can be self-formed via this mechanism. the low temperature spectra of self-formed ingaas/gaas quantum dot superlattices grown on a (001) gaas substrate have a full width at half maximum of 26-34 mev, indicating a better uniformity of quantum dot size than those grown in the s-k mode. this method can provide great degrees of freedom in designing possible quantum dot devices. 1998 published by elsevier science b.v. all rights reserved. |
| 英文摘要 | a new method is realized for the growth of self-formed quantum dots. we identify that dislocation-free islands can be formed by the strain from the strained superlattice taken as a whole. unlike the stranski-krastanow (s-k) growth mode, the islands do not form during the growth of the corresponding strained single layers. highly uniform quantum dots can be self-formed via this mechanism. the low temperature spectra of self-formed ingaas/gaas quantum dot superlattices grown on a (001) gaas substrate have a full width at half maximum of 26-34 mev, indicating a better uniformity of quantum dot size than those grown in the s-k mode. this method can provide great degrees of freedom in designing possible quantum dot devices. 1998 published by elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:34导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:34z (gmt). no. of bitstreams: 1 3051.pdf: 281448 bytes, checksum: e5cbf3db4b071c0d51fde455977ea963 (md5) previous issue date: 1998; chinese acad sci, inst semicond, mat ctr, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | microelectronic engineering, 43-4
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体物理 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0167-9317 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15063]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan D,Zeng YP,Kong MY. New method for the growth of highly uniform quantum dots[C]. 见:2nd international conference on low dimensional structures and devices. lisbon, portugal. may 19-21, 1997. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。