Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices
文献类型：会议论文
| 作者 | Liu J
|
| 出版日期 | 1998 |
| 会议名称 | 2nd international conference on low dimensional structures and devices |
| 会议日期 | may 19-21, 1997 |
| 会议地点 | lisbon, portugal |
| 关键词 | GaAs/AlAs superlattices transport tunnelling Landau level NEGATIVE DIFFERENTIAL CONDUCTIVITY LOW-FIELD MOBILITY SEMICONDUCTOR SUPERLATTICE TEMPERATURE-DEPENDENCE CONDUCTANCE TRANSPORT LOCALIZATION MINIBANDS |
| 页码 | 349-354 |
| 通讯作者 | liu j vienna tech univ inst festkorperelekt floragasse 7-1 a-1040 vienna austria. 电子邮箱地址: j.liu.20@bham.ac.uk |
| 中文摘要 | electron transport in heavily-doped gaas/alas superlattices in parallel electric and magnetic fields is reported. the current-voltage (i-v) characteristic exhibited the feature of negative differential velocity (ndv) and high electric field domain effect at different biases. under strong magnetic fields, sequential resonant tunnelling through landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. (c) 1998 elsevier science b.v. all rights reserved. |
| 英文摘要 | electron transport in heavily-doped gaas/alas superlattices in parallel electric and magnetic fields is reported. the current-voltage (i-v) characteristic exhibited the feature of negative differential velocity (ndv) and high electric field domain effect at different biases. under strong magnetic fields, sequential resonant tunnelling through landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. (c) 1998 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:35导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:35z (gmt). no. of bitstreams: 1 3052.pdf: 273807 bytes, checksum: 15a74ec625893d3857e9a8b57128acae (md5) previous issue date: 1998; vienna tech univ, inst festkorperelekt, a-1040 vienna, austria; natl univ singapore, dept elect engn, ctr optoelect, singapore 119260, singapore; acad sinica, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | microelectronic engineering, 43-4
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体物理 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0167-9317 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15065]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu J. Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices[C]. 见:2nd international conference on low dimensional structures and devices. lisbon, portugal. may 19-21, 1997. |
入库方式： OAI收割
来源：半导体研究所
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