Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures
文献类型：会议论文
| 作者 | Wang YJ ; Nickel HA ; McCombe BD ; Peeters FM ; Shi JM ; Hai GQ ; Wu XG ; Eustis TJ ; Schaff W |
| 出版日期 | 1998 |
| 会议名称 | 8th international conference on modulated semiconductor structures |
| 会议日期 | jul 14-18, 1997 |
| 会议地点 | santa barbara, california |
| 关键词 | resonant magnetopolaron effects GaAs/AlGaAs quantum well structures interface phonons electron-optical-phonon interaction POLARON-CYCLOTRON-RESONANCE PHONON MODES GAAS HETEROSTRUCTURES SUPERLATTICES ELECTRONS |
| 页码 | 161-165 |
| 通讯作者 | wang yj florida state univ natl high magenet field lab 1800 e paul dirac dr tallahassee fl 32306 usa. |
| 中文摘要 | a detailed experimental study of electron cyclotron resonance (cr) has been carried out at 4.2 k in three modulation-doped gaas/al0.3ga0.7as multiple quantum well samples in fields up to 30 t. a strong avoided-level-crossing splitting of the cr energies due to resonant magnetopolaron effects is observed for all samples near the gaas reststrahlen region. resonant splittings in the region of alas-like interface phonon modes of the barriers are observed in two samples with narrower well width and smaller doping concentration. the interaction between electrons and the alas interface optical phonon modes has been calculated for our specific sample structures in the framework of the memory-function formalism. the calculated results are in good agreement with the experimental results, which confirms our assignment of the observed splitting near the alas-like phonon region is due to the resonant magnetopolaron interaction of electrons in the wells with alas-like interface phonons. (c) 1998 elsevier science b.v. all rights reserved. |
| 英文摘要 | a detailed experimental study of electron cyclotron resonance (cr) has been carried out at 4.2 k in three modulation-doped gaas/al0.3ga0.7as multiple quantum well samples in fields up to 30 t. a strong avoided-level-crossing splitting of the cr energies due to resonant magnetopolaron effects is observed for all samples near the gaas reststrahlen region. resonant splittings in the region of alas-like interface phonon modes of the barriers are observed in two samples with narrower well width and smaller doping concentration. the interaction between electrons and the alas interface optical phonon modes has been calculated for our specific sample structures in the framework of the memory-function formalism. the calculated results are in good agreement with the experimental results, which confirms our assignment of the observed splitting near the alas-like phonon region is due to the resonant magnetopolaron interaction of electrons in the wells with alas-like interface phonons. (c) 1998 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:35导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:35z (gmt). no. of bitstreams: 1 3054.pdf: 119254 bytes, checksum: 2bcb8a8569b50fb3c6594fd94d77b6e5 (md5) previous issue date: 1998; florida state univ, natl high magenet field lab, tallahassee, fl 32306 usa; suny buffalo, dept phys, buffalo, ny 14260 usa; univ instelling antwerp, dept nat kunde, uia, b-2610 wilrijk, belgium; univ fed sao carlos, dept fis, br-13565905 sao carlos, sp, brazil; chinese acad sci, natl lab superlattices & microstruct, inst semicond, beijing, peoples r china; cornell univ, dept elect engn, ithaca, ny 14853 usa |
| 收录类别 | CPCI-S |
| 会议录 | physica e, 2 (1-4)
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体物理 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 1386-9477 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15069]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang YJ,Nickel HA,McCombe BD,et al. Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures[C]. 见:8th international conference on modulated semiconductor structures. santa barbara, california. jul 14-18, 1997. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。