Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser
文献类型：会议论文
| 作者 | Pan Z ; Zhang Y ; Du Y ; Wu RH |
| 出版日期 | 1998 |
| 会议名称 | 6th microoptics conference / 14th topical meeting on gradient-index optical systems (moc/grin 97) |
| 会议日期 | oct 07-09, 1997 |
| 会议地点 | tokyo, japan |
| 关键词 | VCSEL selective oxidation stability WET OXIDATION MICROSTRUCTURE |
| 页码 | 3673-3675 |
| 通讯作者 | pan z tokyo inst technol precis & intelligence lab midori ku 4259 nagatsuta yokohama kanagawa 2268503 japan. |
| 中文摘要 | the effects of the carrier gas flow and water temperature on the oxidation rate for different reaction temperatures were investigated. the optimum conditions for stable oxidation were obtained. two mechanisms of the oxidation process are revealed. one is the flow-controlling process, which is unstable. the other is the temperature-controlling process, which is stable. the stable region decreases for higher reaction temperatures. the simulation results for the stable oxidation region are also given. with optimum oxidation conditions, the stability and precision of the oxidation can be dramatically improved. |
| 英文摘要 | the effects of the carrier gas flow and water temperature on the oxidation rate for different reaction temperatures were investigated. the optimum conditions for stable oxidation were obtained. two mechanisms of the oxidation process are revealed. one is the flow-controlling process, which is unstable. the other is the temperature-controlling process, which is stable. the stable region decreases for higher reaction temperatures. the simulation results for the stable oxidation region are also given. with optimum oxidation conditions, the stability and precision of the oxidation can be dramatically improved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:36导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:36z (gmt). no. of bitstreams: 1 3055.pdf: 477083 bytes, checksum: b7296acf1171c8e5d80aa637597a22d1 (md5) previous issue date: 1998; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | japanese journal of applied physics part 1-regular papers short notes & review papers, 37 (6b)
 |
| 会议录出版者 | japan j applied physics ; daini toyokaiji bldg 24-8 shinbashi 4-chome, minato-ku tokyo, 105, japan |
| 学科主题 | 半导体物理 |
| 会议录出版地 | daini toyokaiji bldg 24-8 shinbashi 4-chome, minato-ku tokyo, 105, japan |
| 语种 | 英语 |
| ISSN号 | 0021-4922 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15071]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan Z,Zhang Y,Du Y,et al. Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser[C]. 见:6th microoptics conference / 14th topical meeting on gradient-index optical systems (moc/grin 97). tokyo, japan. oct 07-09, 1997. |
入库方式： OAI收割
来源：半导体研究所
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