High-concentration hydrogen in unintentionally doped GaN
文献类型：会议论文
| 作者 | Zhang JP ; Wang XL ; Sun DZ ; Li XB ; Kong MY |
| 出版日期 | 1998 |
| 会议名称 | 2nd international conference on nitride semiconductors (icns 97) |
| 会议日期 | oct 27-31, 1997 |
| 会议地点 | tokushima city, japan |
| 关键词 | gallium nitride gas source molecular beam epitaxy hydrogen autodoping FILMS |
| 页码 | 566-569 |
| 通讯作者 | zhang jp chinese acad sci inst semicond pob 912 beijing 100083 peoples r china. 电子邮箱地址: zhangjp@red.semi.ac.cn |
| 中文摘要 | we use nuclear reaction analysis to study hydrogen in unintentionally doped gan, and high-concentration hydrogen, nearly 10(21) cm(-3), is detected. accordingly, a broad but intense infrared absorption zone with a peak at 2962 cm(-1) is reported, which is tentatively assigned to the stretch mode of nh: ga complex. the complex is assumed to be one candidate answering for background electrons in unintentionally doped gan. (c) 1998 elsevier science b.v. all rights reserved. |
| 英文摘要 | we use nuclear reaction analysis to study hydrogen in unintentionally doped gan, and high-concentration hydrogen, nearly 10(21) cm(-3), is detected. accordingly, a broad but intense infrared absorption zone with a peak at 2962 cm(-1) is reported, which is tentatively assigned to the stretch mode of nh: ga complex. the complex is assumed to be one candidate answering for background electrons in unintentionally doped gan. (c) 1998 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:37导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:37z (gmt). no. of bitstreams: 1 3059.pdf: 111855 bytes, checksum: 7f7f6cdf9b255e91f1d46bb3c8aa81f6 (md5) previous issue date: 1998; japan soc appl phys.; inst electr informat & commun engineers.; ieee.; electron devices soc.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | japan soc appl phys.; inst electr informat & commun engineers.; ieee.; electron devices soc. |
| 会议录 | journal of crystal growth, 189
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0022-0248 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15079]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang JP,Wang XL,Sun DZ,et al. High-concentration hydrogen in unintentionally doped GaN[C]. 见:2nd international conference on nitride semiconductors (icns 97). tokushima city, japan. oct 27-31, 1997. |
入库方式： OAI收割
来源：半导体研究所
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