Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate
文献类型：会议论文
| 作者 | Jiang DS
|
| 出版日期 | 1998 |
| 会议名称 | 24th ieee international symposium on compound semiconductors |
| 会议日期 | sep 08-11, 1997 |
| 会议地点 | san diego, california |
| 关键词 | SHALLOW DONORS |
| 页码 | 211-214 |
| 通讯作者 | jiang ds paul drude inst solid state elect d-10117 berlin germany. |
| 中文摘要 | we analyze low-temperature raman and photoluminescence spectra of mbe-grown gan layers on sapphire. strong and sharp raman peaks are observed in the low frequency region. these peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal gan. it is proposed that a low frequency raman peak at 11.7 mev is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. the dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these gan layers. |
| 英文摘要 | we analyze low-temperature raman and photoluminescence spectra of mbe-grown gan layers on sapphire. strong and sharp raman peaks are observed in the low frequency region. these peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal gan. it is proposed that a low frequency raman peak at 11.7 mev is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. the dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these gan layers.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:37导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:37z (gmt). no. of bitstreams: 1 3060.pdf: 274884 bytes, checksum: 16cdb21eb97a431a6aaf7fa9bc244174 (md5) previous issue date: 1998; ieee.; motorola.; usn, off naval res.; siemens.; aixtron.; epi.; paul drude inst solid state elect, d-10117 berlin, germany; chinese acad sci, inst semicond, beijing 100083, peoples r china; siemens corp res & dev, d-81730 munich, germany |
| 收录类别 | CPCI-S |
| 会议主办者 | ieee.; motorola.; usn, off naval res.; siemens.; aixtron.; epi. |
| 会议录 | compound semiconductors 1997, 156
 |
| 会议录出版者 | iop publishing ltd ; techno house, redcliffe way, bristol, england bs1 6nx |
| 学科主题 | 半导体物理 |
| 会议录出版地 | techno house, redcliffe way, bristol, england bs1 6nx |
| 语种 | 英语 |
| ISSN号 | 0951-3248 |
| ISBN号 | 0-7503-0556-8 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15081]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS. Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate[C]. 见:24th ieee international symposium on compound semiconductors. san diego, california. sep 08-11, 1997. |
入库方式： OAI收割
来源：半导体研究所
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