Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix
文献类型：会议论文
| 作者 | Xu B
|
| 出版日期 | 1998 |
| 会议名称 | 6th international conference on the formation of semiconductor interfaces (icfsi-6) |
| 会议日期 | jun 23-27, 1997 |
| 会议地点 | cardiff, wales |
| 关键词 | ZNSE/GAAS INTERFACE STATES |
| 页码 | 343-346 |
| 通讯作者 | chen yh hong kong univ sci & technol dept phys clear water bay kowloon hong kong. |
| 中文摘要 | the steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin inas layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer inas in (311)-oriented gaas. the degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the inas islands. (c) 1998 elsevier science b.v. |
| 英文摘要 | the steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin inas layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer inas in (311)-oriented gaas. the degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the inas islands. (c) 1998 elsevier science b.v.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:39导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:39z (gmt). no. of bitstreams: 1 3068.pdf: 247081 bytes, checksum: 2a099426bd8ee98623f4e1de2407f153 (md5) previous issue date: 1998; british assoc crystal growth.; british tourist author.; inst phys.; wales tourist board.; welsh dev agcy.; hong kong univ sci & technol, dept phys, kowloon, hong kong; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | british assoc crystal growth.; british tourist author.; inst phys.; wales tourist board.; welsh dev agcy. |
| 会议录 | applied surface science, 123
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 半导体材料 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0169-4332 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15097]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix[C]. 见:6th international conference on the formation of semiconductor interfaces (icfsi-6). cardiff, wales. jun 23-27, 1997. |
入库方式： OAI收割
来源：半导体研究所
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