Heteroepitaxy of cubic GaN: influence of interface structure
文献类型：会议论文
| 作者 | Trampert A ; Brandt O ; Yang H ; Yang B ; Ploog KH |
| 出版日期 | 1997 |
| 会议名称 | royal-microscopical-society conference on microscopy of semiconducting materials |
| 会议日期 | apr 07-10, 1997 |
| 会议地点 | oxford, england |
| 关键词 | MOLECULAR-BEAM EPITAXY GAN/GAAS(001) GROWTH |
| 页码 | 205-208 |
| 通讯作者 | trampert a paul drude inst festkorperelekt hausvogteipl 5-7 d-10117 berlin germany. |
| 中文摘要 | we report on the epitaxial growth and the microstructure of cubic gan. the layers are deposited by plasma-assisted molecular beam epitaxy on gaas and si substrates. despite the extreme lattice mismatch between these materials, gan grows in the metastable cubic phase with a well-defined orientation-relationship to the gaas substrate including a sharp heteroboundary. the preference of the metastable phase and its epitaxial orientation originates in the interface structure which is found to be governed by a coincidence site lattice. |
| 收录类别 | CPCI-S |
| 会议主办者 | royal microscop soc.; inst phys, electron microscopy & anal grp.; mat res soc.; royal soc.; jeol uk ltd.; oxford instruments ltd. |
| 会议录 | microscopy of semiconducting materials 1997, (157)
 |
| 会议录出版者 | iop publishing ltd ; techno house, redcliffe way, bristol, england bs1 6nx |
| 学科主题 | 半导体物理 |
| 会议录出版地 | techno house, redcliffe way, bristol, england bs1 6nx |
| 语种 | 英语 |
| ISSN号 | 0951-3248 |
| ISBN号 | 0-7503-0464-2 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15099]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Trampert A,Brandt O,Yang H,et al. Heteroepitaxy of cubic GaN: influence of interface structure[C]. 见:royal-microscopical-society conference on microscopy of semiconducting materials. oxford, england. apr 07-10, 1997. |
入库方式： OAI收割
来源：半导体研究所
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