Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers
文献类型：期刊论文
| ; | |
| 作者 | Wei TB (Wei Tongbo); Wang JX (Wang Junxi); Liu NX (Liu Naixin); Lu HX (Lu Hongxi); Zeng YP (Zeng Yiping); Wang GH (Wang Guohong); Li JM (Li Jinmin); Wei, TB, Chinese AcadSci, InstSemicond, Semicond Lighting Technol Res &DevCtr, Beijing 100083, Peoples R China. 电子邮箱地址: tbwei@semi.ac.cn |
| 刊名 | japanese journal of applied physics
 ; JAPANESE JOURNAL OF APPLIED PHYSICS
|
| 出版日期 | 2010 ; 2010 |
| 卷号 | 49期号:10页码:art. no. 100201 |
| 关键词 | LOW-TEMPERATURE ACTIVATION Low-temperature Activation Films FILMS |
| 通讯作者 | wei, tb, chinese acadsci, instsemicond, semicond lighting technol res &devctr, beijing 100083, peoples r china. 电子邮箱地址: tbwei@semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | the annealing of mg-doped gan with pt and mo layers has been found to effectively improve the hole concentration of such material by more than 2 times as high as those in the same material without metal. compared with the ni and mo catalysts, pt showed good activation effect for hydrogen desorption and ohmic contact to the ni/au electrode. despite the weak hydrogen desorption, mo did not diffuse into the ganepilayer in the annealing process, thus suppressing the carrier compensation phenomenon with respect to ni and pt depositions, which resulted in the high activation of mg acceptors. for the gan activated with the ni, pt, and mo layers, the blue emission became dominant, followed by a clear peak redshift and the degradation of photoluminescence signal when compared with that of gan without metal.; The annealing of Mg-doped GaN with Pt and Mo layers has been found to effectively improve the hole concentration of such material by more than 2 times as high as those in the same material without metal. Compared with the Ni and Mo catalysts, Pt showed good activation effect for hydrogen desorption and ohmic contact to the Ni/Au electrode. Despite the weak hydrogen desorption, Mo did not diffuse into the GaNepilayer in the annealing process, thus suppressing the carrier compensation phenomenon with respect to Ni and Pt depositions, which resulted in the high activation of Mg acceptors. For the GaN activated with the Ni, Pt, and Mo layers, the blue emission became dominant, followed by a clear peak redshift and the degradation of photoluminescence signal when compared with that of GaN without metal.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-14t13:47:13z no. of bitstreams: 1 catalytic activation of mg-doped gan by hydrogen desorption using different metal thin layers.pdf: 448507 bytes, checksum: 1df7da5253cb883c5d1d059aaf91ca76 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-14t13:54:59z (gmt) no. of bitstreams: 1 catalytic activation of mg-doped gan by hydrogen desorption using different metal thin layers.pdf: 448507 bytes, checksum: 1df7da5253cb883c5d1d059aaf91ca76 (md5); made available in dspace on 2010-11-14t13:54:59z (gmt). no. of bitstreams: 1 catalytic activation of mg-doped gan by hydrogen desorption using different metal thin layers.pdf: 448507 bytes, checksum: 1df7da5253cb883c5d1d059aaf91ca76 (md5) previous issue date: 2010; this work was supported by the national natural sciences foundation of china under grant no. 60806001, the national high technology program of china under grant no. 2009aa03a198, and the knowledge innovation program of the chinese academy of sciences under grant no. iscas2008t03.; 其它 |
| 学科主题 | 半导体材料 ; 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | this work was supported by the national natural sciences foundation of china under grant no. 60806001, the national high technology program of china under grant no. 2009aa03a198, and the knowledge innovation program of the chinese academy of sciences under grant no. iscas2008t03. |
| 语种 | 英语 ; 英语 |
| 资助机构 | This work was supported by the National Natural Sciences Foundation of China under Grant No. 60806001, the National High Technology Program of China under Grant No. 2009AA03A198, and the Knowledge Innovation Program of the Chinese Academy of Sciences under Grant No. ISCAS2008T03. |
| 公开日期 | 2010-11-14 ; 2010-11-14 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13926]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 通讯作者 | Wei, TB, Chinese AcadSci, InstSemicond, Semicond Lighting Technol Res &DevCtr, Beijing 100083, Peoples R China. 电子邮箱地址: tbwei@semi.ac.cn |
| 推荐引用方式 GB/T 7714 | Wei TB ,Wang JX ,Liu NX ,et al. Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers, Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers[J]. japanese journal of applied physics, JAPANESE JOURNAL OF APPLIED PHYSICS,2010, 2010,49, 49(10):art. no. 100201, Art. No. 100201. |
| APA | Wei TB .,Wang JX .,Liu NX .,Lu HX .,Zeng YP .,...&Wei, TB, Chinese AcadSci, InstSemicond, Semicond Lighting Technol Res &DevCtr, Beijing 100083, Peoples R China. 电子邮箱地址: tbwei@semi.ac.cn.(2010).Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers.japanese journal of applied physics,49(10),art. no. 100201. |
| MLA | Wei TB ,et al."Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers".japanese journal of applied physics 49.10(2010):art. no. 100201. |
入库方式： OAI收割
来源：半导体研究所
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