Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots
文献类型：期刊论文
| 作者 | Li YQ (Li Yueqiang) ; Wang XD (Wang Xiaodong) ; Xu XN (Xu Xiaona) ; Liu W (Liu Wen) ; Chen YL (Chen Yanling) ; Yang FH (Yang Fuhua) ; Tan PH (Tan Pingheng) ; Zeng YP (Zeng Yiping) |
| 刊名 | japanese journal of applied physics
 |
| 出版日期 | 2010 |
| 卷号 | 49期号:10页码:art. no. 104002 |
| 关键词 | REAL-SPACE TRANSFER 2-DIMENSIONAL ELECTRON-GAS |
| 通讯作者 | li, yq, chinese acadsci, instsemicond, engn res ctrsemicond integrated technol, beijing 100083, peoples r china. 电子邮箱地址: xdwang@semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | n-shaped negative differential resistance (ndr) with a high peak-to-valley ratio (pvr) is observed in a gaas-based modulation-doped field effect transistor (modfet) with inas quantum dots (qds) in the barrier layer (qdfet) compared with a gaas modfet. the ndr is explained as the real-space transfer (rst) of high-mobility electrons in a channel into nearby barrier layers with low mobility, and the pvr is enhanced dramatically upon inserting the qd layer. it is also revealed that the qd layer traps holes and acts as a positively charged nano-floating gate after a brief optical illumination, while it acts as a negatively charged nano-floating gate and depletes the adjacent channel when charged by the electrons. the ndr suggests a promising application in memory or high-speed logic devices for the qdfet structure.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-14t13:39:18z no. of bitstreams: 1 observation of n-shaped negative differential resistance in gaas-based modulation-doped field effect transistor with inas quantum dots.pdf: 999075 bytes, checksum: b27ceb584e1f274366a2af7cb03bb016 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-14t13:54:48z (gmt) no. of bitstreams: 1 observation of n-shaped negative differential resistance in gaas-based modulation-doped field effect transistor with inas quantum dots.pdf: 999075 bytes, checksum: b27ceb584e1f274366a2af7cb03bb016 (md5); made available in dspace on 2010-11-14t13:54:49z (gmt). no. of bitstreams: 1 observation of n-shaped negative differential resistance in gaas-based modulation-doped field effect transistor with inas quantum dots.pdf: 999075 bytes, checksum: b27ceb584e1f274366a2af7cb03bb016 (md5) previous issue date: 2010; the authors greatly acknowledge the support from the national basic research program of china (973 program) under the grant number 2010cb934104, and national natural science foundation of china under the grant number of 60606024.; 其它 |
| 学科主题 | 微电子学 |
| 收录类别 | SCI |
| 资助信息 | the authors greatly acknowledge the support from the national basic research program of china (973 program) under the grant number 2010cb934104, and national natural science foundation of china under the grant number of 60606024. |
| 语种 | 英语 |
| 公开日期 | 2010-11-14 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13925]  |
| 专题 | 半导体研究所_半导体集成技术工程研究中心 |
| 推荐引用方式 GB/T 7714 | Li YQ ,Wang XD ,Xu XN ,et al. Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots[J]. japanese journal of applied physics,2010,49(10):art. no. 104002. |
| APA | Li YQ .,Wang XD .,Xu XN .,Liu W .,Chen YL .,...&Zeng YP .(2010).Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots.japanese journal of applied physics,49(10),art. no. 104002. |
| MLA | Li YQ ,et al."Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots".japanese journal of applied physics 49.10(2010):art. no. 104002. |
入库方式： OAI收割
来源：半导体研究所
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