Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors
文献类型：期刊论文
| 作者 | Zhang YB (Zhang Yanbo) ; Xiong Y (Xiong Ying) ; Yang XA (Yang Xiang) ; Wang Y (Wang Ying) ; Han WH (Han Weihua) ; Yang FH (Yang Fuhua) |
| 刊名 | journal of nanoscience and nanotechnology
 |
| 出版日期 | 2010 |
| 卷号 | 10期号:11 sp. iss. si页码:7113-7116 |
| 关键词 | Subthreshold Swing (SS) Silicon-on-Insulator (SOI) Nanowire Wrap Gate Side Gates |
| 通讯作者 | han, wh, chinese acad sci, inst semicond, res ctr semicond integrat technol, beijing 100083, peoples r china. |
| 合作状况 | 其它 |
| 英文摘要 | soi based wrap-gate silicon nanowire fets are fabricated through electron beam lithography and wet etching. dry thermal oxidation is used to further reduce the patterned fins cross section and transfer them into nanowires. silicon nanowire fets with different nanowire widths varying from 60 nm to 200 nm are fabricated and the number of the nanowires contained in a channel is also varied. the on-current (i-on) and off-current (i-off) of the fabricated silicon nanowire fet are 0.59 mu a and 0.19 na respectively. the subthreshold swing (ss) and the drain induced barrier lowering are 580 mv/dec and 149 mvn respectively due to the 30 nm thick gate oxide and 1015 cm(-3) lightly doped silicon nanowire channel. the nanowire width dependence of ss is shown and attributed to the fact that the side-gate parts of a wrap gate play a more effectual role as the nanowires in a channel get narrower. it seems the nanowire number in a channel has no effect on ss because the side-gate parts fill in the space between two adjacent nanowires.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-30t05:34:01z no. of bitstreams: 1 experimental study on the subthreshold swing of silicon nanowire transistors.pdf: 873187 bytes, checksum: ba4e55c94e019e3c9e27860a9d909491 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-30t05:42:45z (gmt) no. of bitstreams: 1 experimental study on the subthreshold swing of silicon nanowire transistors.pdf: 873187 bytes, checksum: ba4e55c94e019e3c9e27860a9d909491 (md5); made available in dspace on 2010-11-30t05:42:45z (gmt). no. of bitstreams: 1 experimental study on the subthreshold swing of silicon nanowire transistors.pdf: 873187 bytes, checksum: ba4e55c94e019e3c9e27860a9d909491 (md5) previous issue date: 2010; 其它 |
| 学科主题 | 微电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-30 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20648]  |
| 专题 | 半导体研究所_半导体集成技术工程研究中心 |
| 推荐引用方式 GB/T 7714 | Zhang YB ,Xiong Y ,Yang XA ,et al. Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors[J]. journal of nanoscience and nanotechnology,2010,10(11 sp. iss. si):7113-7116. |
| APA | Zhang YB ,Xiong Y ,Yang XA ,Wang Y ,Han WH ,&Yang FH .(2010).Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors.journal of nanoscience and nanotechnology,10(11 sp. iss. si),7113-7116. |
| MLA | Zhang YB ,et al."Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors".journal of nanoscience and nanotechnology 10.11 sp. iss. si(2010):7113-7116. |
入库方式： OAI收割
来源：半导体研究所
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