The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system
文献类型：期刊论文
| 作者 | Song HP (Song Huaping) ; Guo Y (Guo Yan) ; Yang A (Yang Anli) ; Wei HY (Wei Hongyuan) ; Xu XQ (Xu Xiaoqing) ; Liu JM (Liu Jianming) ; Yang SY (Yang Shaoyan) ; Liu XL (Liu Xianglin) ; Zhu QS (Zhu Qinsheng) ; Wang ZG (Wang Zhanguo) |
| 刊名 | crystengcomm
 |
| 出版日期 | 2010 |
| 卷号 | 12期号:11页码:3936-3941 |
| 关键词 | INDIUM-PHOSPHIDE NANOWIRES |
| 通讯作者 | song, hp, instsemicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: songhp@semi.ac.cn ; xlliu@semi.ac.cn ; qszhu@semi.ac.cn |
| 合作状况 | 其它 |
| 学科主题 | 半导体材料 |
| 资助信息 | this work was supported by the national science foundation of china (60976008 and 60776015), the special funds for major state basic research project (973 program) of china (2006cb604907), and the 863 high technology r&d program of china (2007aa03z402 and 2007aa03z451). the authors express their appreciations to prof. yongliang li (analytical and testing center, beijing normal university) for fe-sem measurements, to drtieying yang and prof. huanhua wang (beijing synchrotron radiation facility, institute of high energy physics, chinese academy of sciences) for xrd measurements and helpful discussions. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13921]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Song HP ,Guo Y ,Yang A ,et al. The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system[J]. crystengcomm,2010,12(11):3936-3941. |
| APA | Song HP .,Guo Y .,Yang A .,Wei HY .,Xu XQ .,...&Wang ZG .(2010).The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system.crystengcomm,12(11),3936-3941. |
| MLA | Song HP ,et al."The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system".crystengcomm 12.11(2010):3936-3941. |
入库方式： OAI收割
来源：半导体研究所
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