Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate
文献类型：期刊论文
| 作者 | Yang ZC (Yang Z. C.) ; Huang AP (Huang A. P.) ; Zheng XH (Zheng X. H.) ; Xiao ZS (Xiao Z. S.) ; Liu XY (Liu X. Y.) ; Zhang XW (Zhang X. W.) ; Chu PK (Chu Paul K.) ; Wang WW (Wang W. W.) |
| 刊名 | ieee electron device letters
 |
| 出版日期 | 2010 |
| 卷号 | 31期号:10页码:1101-1103 |
| 关键词 | Electron state density Fermi-level pinning (FLP) MIS structures work function (WF) WORK FUNCTION |
| 通讯作者 | yang, zc, beihanguniv, deptphys, beijing 100191, peoples r china. 电子邮箱地址: aphuang@buaa.edu.cn |
| 合作状况 | 国内 |
| 英文摘要 | the fermi-level pinning (flp) at the metal/high-k interface and its dependence on the electron state density of the metal gate are investigated. it is found that the flp is largely determined by the distortion of the vacuum level of the metal which is quantitatively ruled by the electron state density of the metal. the physical origin of the vacuum level distortion of the metal is attributed to an image charge of the interface charge in the metal. such results indicate that the effective work function of the metal/high-k stack is also governed by the electron state density of the metal.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-14t13:27:48z no. of bitstreams: 1 fermi-level pinning at metal-high-k interface influenced by electron state density of metal gate.pdf: 190685 bytes, checksum: 1453e93363024ac5fae55d0f9c7ca1f6 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-14t13:53:34z (gmt) no. of bitstreams: 1 fermi-level pinning at metal-high-k interface influenced by electron state density of metal gate.pdf: 190685 bytes, checksum: 1453e93363024ac5fae55d0f9c7ca1f6 (md5); made available in dspace on 2010-11-14t13:53:34z (gmt). no. of bitstreams: 1 fermi-level pinning at metal-high-k interface influenced by electron state density of metal gate.pdf: 190685 bytes, checksum: 1453e93363024ac5fae55d0f9c7ca1f6 (md5) previous issue date: 2010; this work was supported in part by the national natural science foundation of china under grants 50802005 and 11074020, by the program for new century excellent talents in university under grant ncet-08-0029, by the ph.d. program foundation of ministry of education of china under grant 200800061055, by the shanghai science and technology r&d fund under grant 0852nm03300, by the national basic research fund under grant 2005cb623901, by the shanghai-unilever research and development fund under grant 09520715200, and by the hong kong research grants council general research funds under grant cityu 112608. the review of this letter was arranged by editor m. passlack.; 国内 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | this work was supported in part by the national natural science foundation of china under grants 50802005 and 11074020, by the program for new century excellent talents in university under grant ncet-08-0029, by the ph.d. program foundation of ministry of education of china under grant 200800061055, by the shanghai science and technology r&d fund under grant 0852nm03300, by the national basic research fund under grant 2005cb623901, by the shanghai-unilever research and development fund under grant 09520715200, and by the hong kong research grants council general research funds under grant cityu 112608. the review of this letter was arranged by editor m. passlack. |
| 语种 | 英语 |
| 公开日期 | 2010-11-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13922]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Yang ZC ,Huang AP ,Zheng XH ,et al. Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate[J]. ieee electron device letters,2010,31(10):1101-1103. |
| APA | Yang ZC .,Huang AP .,Zheng XH .,Xiao ZS .,Liu XY .,...&Wang WW .(2010).Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate.ieee electron device letters,31(10),1101-1103. |
| MLA | Yang ZC ,et al."Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate".ieee electron device letters 31.10(2010):1101-1103. |
入库方式： OAI收割
来源：半导体研究所
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