Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure
文献类型：期刊论文
| 作者 | Ding Y (Ding Y.) ; Fan WJ (Fan W. J.) ; Ma BS (Ma B. S.) ; Xu DW (Xu D. W.) ; Yoon SF (Yoon S. F.) ; Liang S (Liang S.) ; Zhao LJ (Zhao L. J.) ; Wasiak M (Wasiak M.) ; Czyszanowski T (Czyszanowski T.) ; Nakwaski W (Nakwaski W.) |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2010 |
| 卷号 | 108期号:7页码:art. no. 073111 |
| 关键词 | VAPOR-PHASE EPITAXY PHOTOVOLTAGE SPECTROSCOPY PHOTOLUMINESCENCE MODES |
| 通讯作者 | ding, y, nanyangtechnoluniv, sch elect & elect engn, singapore 639798, singapore. 电子邮箱地址: yding@ntu.edu.sg |
| 合作状况 | 国际 |
| 英文摘要 | microphotoluminescence (mu-pl) investigation has been performed at room temperature on inas quantum dot (qd) vertical cavity surface emitting laser (vcsel) structure in order to characterize the qd epitaxial structure which was designed for 1.3 mu m wave band emission. actual and precise qd emission spectra including distinct ground state (gs) and excited state (es) transition peaks are obtained by an edge-excitation and edge-emission (eeee) mu-pl configuration. conventional photoluminescence methods for qd-vcsels structure analysis are compared and discussed, which indicate the eeee mu-pl is a useful tool to determine the optical features of the qd active region in an as-grown vcsel structure. some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. after adjustment of epitaxial growth according to eeee mu-pl measurement results, qd-vcsel structure wafer with qd gs transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-14t14:05:10z no. of bitstreams: 1 microphotoluminescence investigation of inas quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure.pdf: 424947 bytes, checksum: a6a2327bda7f54c22c483e728b9dc422 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-14t14:26:23z (gmt) no. of bitstreams: 1 microphotoluminescence investigation of inas quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure.pdf: 424947 bytes, checksum: a6a2327bda7f54c22c483e728b9dc422 (md5); made available in dspace on 2010-11-14t14:26:23z (gmt). no. of bitstreams: 1 microphotoluminescence investigation of inas quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure.pdf: 424947 bytes, checksum: a6a2327bda7f54c22c483e728b9dc422 (md5) previous issue date: 2010; this work was supported by the a*star singapore-poland bilateral program, serc grant no. 0621200015. the authors would like to thank dr. sergey mikhrin of innolume gmbh for his support and cooperation in epitaxial growth and dr. hong-weiqu of chinese academy of sciences for technical support and useful discussion.; 国际 |
| 学科主题 | 半导体材料 |
| 资助信息 | this work was supported by the a*star singapore-poland bilateral program, serc grant no. 0621200015. the authors would like to thank dr. sergey mikhrin of innolume gmbh for his support and cooperation in epitaxial growth and dr. hong-weiqu of chinese academy of sciences for technical support and useful discussion. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13930]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Ding Y ,Fan WJ ,Ma BS ,et al. Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure[J]. journal of applied physics,2010,108(7):art. no. 073111. |
| APA | Ding Y .,Fan WJ .,Ma BS .,Xu DW .,Yoon SF .,...&Nakwaski W .(2010).Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure.journal of applied physics,108(7),art. no. 073111. |
| MLA | Ding Y ,et al."Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure".journal of applied physics 108.7(2010):art. no. 073111. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。