Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis
文献类型：期刊论文
| 作者 | Huang TM (Huang TianMao) ; Chen NF (Chen NuoFu) ; Zhang XW (Zhang XingWang) ; Bai YM (BaiYiMing) ; Yin ZG (Yin ZhiGang) ; Shi HW (Shi HuiWei) ; Zhang H (Zhang Han) ; Wang Y (Wang Yu) ; Wang YS (Wang YanShuo) ; Yang XL (Yang XiaoLi) |
| 刊名 | science china-technological sciences
 |
| 出版日期 | 2010 |
| 卷号 | 53期号:11页码:3002-3005 |
| 关键词 | polycrystalline silicon thin film aluminum induced crystallization (111) preferred orientation INDUCED LAYER-EXCHANGE AMORPHOUS-SILICON SOLAR-CELLS GLASS SI ORIENTATION MODEL |
| 通讯作者 | huang, tm, chinese acadsci, instsemicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: tmhuang@semi.ac.cn |
| 合作状况 | 国内 |
| 英文摘要 | a polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (aic). al and alpha-si layers were deposited by magnetron sputtering respectively and annealed at 480a degrees c for 1 h to realize layer exchange. the polycrystalline silicon thin film was continuous and strongly (111) oriented. by analyzing the structure variation of the oxidation membrane and lattice mismatch between gamma-al2o3 and si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of gamma-al2o3, which was formed at the early stage of annealing.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-14t14:24:02z no. of bitstreams: 1 aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis.pdf: 687572 bytes, checksum: 4f8ab8e7b77d6a152e55db970dafb2e3 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-14t14:27:12z (gmt) no. of bitstreams: 1 aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis.pdf: 687572 bytes, checksum: 4f8ab8e7b77d6a152e55db970dafb2e3 (md5); made available in dspace on 2010-11-14t14:27:12z (gmt). no. of bitstreams: 1 aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis.pdf: 687572 bytes, checksum: 4f8ab8e7b77d6a152e55db970dafb2e3 (md5) previous issue date: 2010; this work was supported by the national basic research program of china ("973" project) (grant no. 2010cb933803), the national natural science foundation of china (grant no. 2102042), and the visiting scholar foundation of state key lab of silicon materials, zhejiang university (grant no. skl 2009-12).; 国内 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | this work was supported by the national basic research program of china ("973" project) (grant no. 2010cb933803), the national natural science foundation of china (grant no. 2102042), and the visiting scholar foundation of state key lab of silicon materials, zhejiang university (grant no. skl 2009-12). |
| 语种 | 英语 |
| 公开日期 | 2010-11-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13935]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Huang TM ,Chen NF ,Zhang XW ,et al. Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis[J]. science china-technological sciences,2010,53(11):3002-3005. |
| APA | Huang TM .,Chen NF .,Zhang XW .,Bai YM .,Yin ZG .,...&Yang XL .(2010).Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis.science china-technological sciences,53(11),3002-3005. |
| MLA | Huang TM ,et al."Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis".science china-technological sciences 53.11(2010):3002-3005. |
入库方式： OAI收割
来源：半导体研究所
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