The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy
文献类型:期刊论文
作者 | Song HP (Song H. P.) ; Zheng GL (Zheng G. L.) ; Yang AL (Yang A. L.) ; Guo Y (Guo Y.) ; Wei HY (Wei H. Y.) ; Li CM (Li C. M.) ; Yang SY (Yang S. Y.) ; Liu XL (Liu X. L.) ; Zhu QS (Zhu Q. S.) ; Wang ZG (Wang Z. G.) |
刊名 | solid state communications |
出版日期 | 2010 |
卷号 | 150期号:41-42页码:1991-1994 |
关键词 | ZnO In2O3 MOCVD Photoelectron spectroscopies IN2O3-ZNO FILMS TRANSPARENT OXIDE SEMICONDUCTORS INN |
通讯作者 | song, hp, chinese acad sci, key lab semicond mat sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: songhp@semi.ac.cn ; xlliu@semi.ac.cn |
合作状况 | 其它 |
学科主题 | 半导体材料 |
资助信息 | this work was supported by the 863 high technology r&d program of china (grant nos. 2007aa03z402 and 2007aa03z451), the special funds for major state basic research project (973 program) of china (grant no. 2006cb604907), and the national science foundation of china (grant nos. 60506002 and 60776015). the authors express their appreciation to dr. tieying yang and prof. huanhua wang (beijing synchrotron radiation facility, institute of high energy physics, chinese academy of sciences) for xrd measurements and helpful discussions. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-11-27 |
源URL | [http://ir.semi.ac.cn/handle/172111/20646] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Song HP ,Zheng GL ,Yang AL ,et al. The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy[J]. solid state communications,2010,150(41-42):1991-1994. |
APA | Song HP .,Zheng GL .,Yang AL .,Guo Y .,Wei HY .,...&Wang ZG .(2010).The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy.solid state communications,150(41-42),1991-1994. |
MLA | Song HP ,et al."The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy".solid state communications 150.41-42(2010):1991-1994. |
入库方式: OAI收割
来源:半导体研究所
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