Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters
文献类型:期刊论文
作者 | Song YF (Song Yafeng) ; Lu YW (Lu Yanwu) ; Zhang BA (Zhang Biao) ; Xu XQ (Xu Xiaoqing) ; Wang J (Wang Jun) ; Guo Y (Guo Yan) ; Shi K (Shi Kai) ; Li ZW (Li Zhiwei) ; Liu XL (Liu Xianglin) ; Yang SY (Yang Shaoyan) ; Zhu QS (Zhu Qinsheng) ; Wang ZG (Wang Zhanguo) |
刊名 | journal of applied physics
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出版日期 | 2010 |
卷号 | 108期号:8页码:art. no. 083112 |
关键词 | OPTICAL PHONON ENERGY INVERSION-LAYERS TRANSITIONS RELAXATION LASERS STATES |
通讯作者 | song, yf, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: songyafeng@semi.ac.cn |
合作状况 | 国内 |
英文摘要 | intersubband absorption energy shifts in 3-level system stemming from depolarization and excitonlike effects are investigated. analytically, the expressions we derive present good explanations to the conventional 2-level results and bare potential transition energy results; and numerical results show that they are more exact than the previous studies to describe the 3-level system depolarization and excitonlike shift (des) character especially for higher carrier density (more than 8 x 10(11) cm(-2)). one interesting detail we find is that the "large blue" des becomes "slight redshift" in the low doping limit (less than 1.9 x 10(11) cm(-2)), which may be neglected by the previous studies of intersubband transitions. temperature character of des in the step well structure is also numerically studied. finally the above are applied to calculate asymmetric step quantum well structures. the two main functional aspects of terahertz (thz) emitters are discussed and several basic optimizing conditions are considered. by adjusting the well geometry parameters and material composition systematically, some optimized structures which satisfy all of the six conditions are recommended in tables. these optimizations may provide useful references to the design of 3-level-based optically pumping thz emitters.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-05t04:48:56z no. of bitstreams: 1 intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters.pdf: 1302540 bytes, checksum: f48d1c9cd4bc582a6968369657f0c0a0 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-05t05:05:26z (gmt) no. of bitstreams: 1 intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters.pdf: 1302540 bytes, checksum: f48d1c9cd4bc582a6968369657f0c0a0 (md5); made available in dspace on 2010-12-05t05:05:26z (gmt). no. of bitstreams: 1 intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters.pdf: 1302540 bytes, checksum: f48d1c9cd4bc582a6968369657f0c0a0 (md5) previous issue date: 2010; this work was supported by the special funds for major state basic research project 973 program of china (grant no. 2006cb604907), the national science foundation of china (grant nos. 60776015 and 60976008), and the 863 high technology r&d program of china (grant nos. 2007aa03z402 and 2007aa03z.; 国内 |
学科主题 | 半导体材料 |
收录类别 | SCI |
资助信息 | this work was supported by the special funds for major state basic research project 973 program of china (grant no. 2006cb604907), the national science foundation of china (grant nos. 60776015 and 60976008), and the 863 high technology r&d program of china (grant nos. 2007aa03z402 and 2007aa03z. |
语种 | 英语 |
公开日期 | 2010-12-05 |
源URL | [http://ir.semi.ac.cn/handle/172111/20661] ![]() |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Song YF ,Lu YW ,Zhang BA ,et al. Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters[J]. journal of applied physics,2010,108(8):art. no. 083112. |
APA | Song YF .,Lu YW .,Zhang BA .,Xu XQ .,Wang J .,...&Wang ZG .(2010).Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters.journal of applied physics,108(8),art. no. 083112. |
MLA | Song YF ,et al."Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters".journal of applied physics 108.8(2010):art. no. 083112. |
入库方式: OAI收割
来源:半导体研究所
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