Blue-shift photoluminescence from porous InAlAs
文献类型：期刊论文
| 作者 | Jiang YC (Jiang Y. C.) ; Liu FQ (Liu F. Q.) ; Wang LJ (Wang L. J.) ; Yin W (Yin W.) ; Wang ZG (Wang Z. G.) |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2010 |
| 卷号 | 25期号:11页码:art. no. 115006 |
| 关键词 | MACROPOROUS SILICON PORE FORMATION GAP INP AL0.48IN0.52AS NANOSTRUCTURES MORPHOLOGY |
| 通讯作者 | jiang, yc, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. e-mail address: fqliu@semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | a porous inalas structure was first obtained by electrochemical etching. nano-pore arrays were formed when the in0.52al0.48as membrane was anodized at constant voltages in an hf aqueous solution. these self-assembled structures showed evident blue-shift photoluminescence emissions. while a quantum size effect alone underestimates the blue-shift energy for a sample with a relatively large average pore wall thickness, a novel effect caused by the asymmetric etching is proposed to account for this phenomenon. the results inferred from the x-ray double crystal diffraction are in good agreement with the experimental data.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-28t00:30:24z no. of bitstreams: 1 blue-shift photoluminescence from porous inalas.pdf: 699726 bytes, checksum: f56d3ba28ee77d143a20f12e67aa5109 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-28t00:59:28z (gmt) no. of bitstreams: 1 blue-shift photoluminescence from porous inalas.pdf: 699726 bytes, checksum: f56d3ba28ee77d143a20f12e67aa5109 (md5); made available in dspace on 2010-12-28t00:59:28z (gmt). no. of bitstreams: 1 blue-shift photoluminescence from porous inalas.pdf: 699726 bytes, checksum: f56d3ba28ee77d143a20f12e67aa5109 (md5) previous issue date: 2010; this work was supported by the national research projects of china (grant numbers are 60525406, 60736031, 60806018, 60906026, 2006cb604903, 2007aa03z446 and 2009aa03z403, respectively). the authors would like to thank x l zhou for useful discussion and an anonymous reviewer of journal of applied physics for helpful suggestions.; 其它 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | this work was supported by the national research projects of china (grant numbers are 60525406, 60736031, 60806018, 60906026, 2006cb604903, 2007aa03z446 and 2009aa03z403, respectively). the authors would like to thank x l zhou for useful discussion and an anonymous reviewer of journal of applied physics for helpful suggestions. |
| 语种 | 英语 |
| 公开日期 | 2010-12-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20680]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Jiang YC ,Liu FQ ,Wang LJ ,et al. Blue-shift photoluminescence from porous InAlAs[J]. semiconductor science and technology,2010,25(11):art. no. 115006. |
| APA | Jiang YC ,Liu FQ ,Wang LJ ,Yin W ,&Wang ZG .(2010).Blue-shift photoluminescence from porous InAlAs.semiconductor science and technology,25(11),art. no. 115006. |
| MLA | Jiang YC ,et al."Blue-shift photoluminescence from porous InAlAs".semiconductor science and technology 25.11(2010):art. no. 115006. |
入库方式： OAI收割
来源：半导体研究所
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