Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films
文献类型：期刊论文
| 作者 | Hao GD (Hao Guo-Dong) ; Chen YH (Chen Yong-Hai) ; Fan YM (Fan Ya-Ming) ; Huang XH (Huang Xiao-Hui) ; Wang HB (Wang Huai-Bing) |
| 刊名 | chinese physics b
 |
| 出版日期 | 2010 |
| 卷号 | 19期号:11页码:art. no. 117104 |
| 关键词 | LIGHT-EMITTING-DIODES WURTZITE SEMICONDUCTORS QUANTUM-WELLS MATRIX-ELEMENTS SEMIPOLAR SAPPHIRE |
| 通讯作者 | hao, gd, chinese acad sci, suzhou inst nanotech & nanobion, nanodevices & mat div, suzhou 215125, peoples r china. |
| 合作状况 | 国内 |
| 英文摘要 | we present the theoretical results of the electronic band structure of wurtzite gan films under biaxial strains in the (11 (2) over bar2)-plane the calculations are performed by the kappa p perturbation theory approach through using the effective-mass hamiltonian for an arbitrary direction the results show that the transition energies decrease with the biaxial strains changing from -0 5% to 0 5% for films of (11 (2) over bar2)-plane, the strains are expected to be anisotropic in the growth plane such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property the strain can also result in optical polarisation switching phenomena finally, we discuss the applications of these properties to the (11 (2) over bar2) plane gan based light emitting diode and lase diode; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-28t00:45:19z no. of bitstreams: 1 strain effects on optical polarisation properties in (11(2)over-bar2) plane gan films.pdf: 1086425 bytes, checksum: 60f38cb3609ec6369615f3fc5393e9ee (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-28t00:59:56z (gmt) no. of bitstreams: 1 strain effects on optical polarisation properties in (11(2)over-bar2) plane gan films.pdf: 1086425 bytes, checksum: 60f38cb3609ec6369615f3fc5393e9ee (md5); made available in dspace on 2010-12-28t00:59:56z (gmt). no. of bitstreams: 1 strain effects on optical polarisation properties in (11(2)over-bar2) plane gan films.pdf: 1086425 bytes, checksum: 60f38cb3609ec6369615f3fc5393e9ee (md5) previous issue date: 2010; project supported by the national basic research program of china (grant nos 2006cb604908 and 2006cb921607), and the national natural science foundation of china (grant nos 60625402, 60990313 and 60990311); 国内 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | project supported by the national basic research program of china (grant nos 2006cb604908 and 2006cb921607), and the national natural science foundation of china (grant nos 60625402, 60990313 and 60990311) |
| 语种 | 英语 |
| 公开日期 | 2010-12-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20683]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Hao GD ,Chen YH ,Fan YM ,et al. Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films[J]. chinese physics b,2010,19(11):art. no. 117104. |
| APA | Hao GD ,Chen YH ,Fan YM ,Huang XH ,&Wang HB .(2010).Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films.chinese physics b,19(11),art. no. 117104. |
| MLA | Hao GD ,et al."Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films".chinese physics b 19.11(2010):art. no. 117104. |
入库方式： OAI收割
来源：半导体研究所
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