Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films
文献类型：期刊论文
| 作者 | Ying J (Ying J.) ; Zhang XW (Zhang X. W.) ; Fan YM (Fan Y. M.) ; Tan HR (Tan H. R.) ; Yin ZG (Yin Z. G.) |
| 刊名 | diamond and related materials
 |
| 出版日期 | 2010 |
| 卷号 | 19期号:11页码:1371-1376 |
| 关键词 | Cubic boron nitride Doping Ion beam assisted deposition X-ray photoelectron spectroscopy RAY PHOTOELECTRON-SPECTROSCOPY VAPOR-DEPOSITION SI NUCLEATION GROWTH |
| 通讯作者 | zhang, xw, cas, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. xwzhang@semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | we have achieved in-situ si incorporation into cubic boron nitride (c-bn) thin films during ion beam assisted deposition. the effects of silicon incorporation on the composition, structure and electric conductivity of c-bn thin films were investigated by fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy and electrical measurements. the results suggest that the content of the cubic phase remains stable on the whole with the incorporation of si up to a concentration of 3.3 at.%, and the higher si concentrations lead to a gradual change from c-bn to hexagonal boron nitride. it is found that the introduced si atoms only replace b atoms and combine with n atoms to form si-n bonds, and no evidence of the existence of si-b bonds is observed. the resistance of the si-doped c-bn films gradually decreases with increasing si concentration, and the resistivity of the c-bn film with 3.3 at.% si is lowered by two orders of magnitude as compared to undoped samples.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-28t00:48:52z no. of bitstreams: 1 effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films.pdf: 850711 bytes, checksum: 0576f8b30626a4bd7607388827d61af0 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-28t01:00:03z (gmt) no. of bitstreams: 1 effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films.pdf: 850711 bytes, checksum: 0576f8b30626a4bd7607388827d61af0 (md5); made available in dspace on 2010-12-28t01:00:03z (gmt). no. of bitstreams: 1 effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films.pdf: 850711 bytes, checksum: 0576f8b30626a4bd7607388827d61af0 (md5) previous issue date: 2010; this work was financially supported by the national basic research program of china (973 program) under grant no. 2010cb933803 and the national natural science foundation of china (50601025).; 其它 |
| 学科主题 | 半导体材料 |
| 资助信息 | this work was financially supported by the national basic research program of china (973 program) under grant no. 2010cb933803 and the national natural science foundation of china (50601025). |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-12-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20684]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Ying J ,Zhang XW ,Fan YM ,et al. Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films[J]. diamond and related materials,2010,19(11):1371-1376. |
| APA | Ying J ,Zhang XW ,Fan YM ,Tan HR ,&Yin ZG .(2010).Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films.diamond and related materials,19(11),1371-1376. |
| MLA | Ying J ,et al."Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films".diamond and related materials 19.11(2010):1371-1376. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。