中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Elimination of photon quenching by a transition layer to fabricate a quenching-shield sandwich structure for 800 nm excited upconversion luminescence of nd3+-sensitized nanoparticles

文献类型:期刊论文

作者Zhong YT(钟业腾); Tian G(田甘); Gu ZJ(谷战军); Yang YJ(杨一君); Gu L(谷林); Zhao YL(赵禹亮); Ma Y(马颖); Yao JN(姚建年)
刊名Adv. Mater.
出版日期2013-12-12
卷号26期号:18页码:2831-2837
产权排序第一
学科主题物理化学
公开日期2016-05-09
源URL[http://ir.iccas.ac.cn/handle/121111/28791]  
专题化学研究所_光化学实验室
作者单位中国科学院化学研究所
推荐引用方式
GB/T 7714
Zhong YT,Tian G,Gu ZJ,et al. Elimination of photon quenching by a transition layer to fabricate a quenching-shield sandwich structure for 800 nm excited upconversion luminescence of nd3+-sensitized nanoparticles[J]. Adv. Mater.,2013,26(18):2831-2837.
APA 钟业腾.,田甘.,谷战军.,杨一君.,谷林.,...&姚建年.(2013).Elimination of photon quenching by a transition layer to fabricate a quenching-shield sandwich structure for 800 nm excited upconversion luminescence of nd3+-sensitized nanoparticles.Adv. Mater.,26(18),2831-2837.
MLA 钟业腾,et al."Elimination of photon quenching by a transition layer to fabricate a quenching-shield sandwich structure for 800 nm excited upconversion luminescence of nd3+-sensitized nanoparticles".Adv. Mater. 26.18(2013):2831-2837.

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来源:化学研究所

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