Effects of Ga doping and hollow structure on the band-structures and photovoltaic properties of SnO2 photoanode dye-sensitized solar cells
文献类型：期刊论文
| 作者 | Duan, Yandong1,2; Zheng, Jiaxin1; Fu, Nianqing2,3; Hu, Jiangtao1; Liu, Tongchao1; Fang, Yanyan2; Zhang, Qian4; Zhou, Xiaowen2; Lin, Yuan1,2; Pan, Feng1 |
| 刊名 | RSC Advances
 |
| 出版日期 | 2015 |
| 卷号 | 5期号:114页码:93765-93772 |
| 英文摘要 | The photon-to-electricity conversion properties of the prepared photoanode based on SnO2 nanocrystals, which are assembled as the rough hollow microspheres (RHMs), are improved by aliovalent Ga3+ doping. The conduction band (CB) of the doped SnO2 shifts negatively with increasing the Ga content from 1 to 5 mol% gradually. Moreover, the prepared Ga-doped SnO2 photoanode shows an advantage in repressing the charge recombination. As a result, both the negative shift of the CB and repressed charge recombination enhance the open-circuit photovoltage (V-oc) and the short-circuit photocurrent (J(sc)) of the DSSCs, and the power conversion efficiency (eta) is increased by 80% at 3 mol% Ga-doping SnO2 to compare with the undoped SnO2 for DSSCs (AM 1.5, 100 mW cm(-2)). After treating the samples with TiCl4, an overall photoconversion efficiency (approximately 7.11%) for SnO2 based DSSCs is achieved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-05-09 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/29217]  |
| 专题 | 化学研究所_光化学实验室 |
| 作者单位 | 1.Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China 2.Chinese Acad Sci, Inst Chem, Key Lab Photochem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China 3.Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China 4.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Duan, Yandong,Zheng, Jiaxin,Fu, Nianqing,et al. Effects of Ga doping and hollow structure on the band-structures and photovoltaic properties of SnO2 photoanode dye-sensitized solar cells[J]. RSC Advances,2015,5(114):93765-93772. |
| APA | Duan, Yandong.,Zheng, Jiaxin.,Fu, Nianqing.,Hu, Jiangtao.,Liu, Tongchao.,...&Pan, Feng.(2015).Effects of Ga doping and hollow structure on the band-structures and photovoltaic properties of SnO2 photoanode dye-sensitized solar cells.RSC Advances,5(114),93765-93772. |
| MLA | Duan, Yandong,et al."Effects of Ga doping and hollow structure on the band-structures and photovoltaic properties of SnO2 photoanode dye-sensitized solar cells".RSC Advances 5.114(2015):93765-93772. |
入库方式： OAI收割
来源：化学研究所
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