Growth and Etching of Monolayer Hexagonal Boron Nitride
文献类型：期刊论文
| 作者 | Wang, Lifeng1,2,3; Wu, Bin3; Jiang, Lili3; Chen, Jisi3; Li, Yongtao3; Guo, Wei3; Hu, Pingan1,2; Liu, Yunqi3 |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2015-09-02 |
| 卷号 | 27期号:33页码:4858-4864 |
| 关键词 | chemical vapor deposition diffusion growth and etching hexagonal boron nitride |
| 英文摘要 | The full spectrum from attachment-kinetic-dominated to diffusion-controlled modes is revealed for the cases of monolayer h-BN chemical vapor deposition (CVD) growth and Ar/H-2 etching. The sets of grown and etched structures exhibit well-defined shape evolution from Euclidian to fractal geometry. The detailed abnormal processes for merging h-BN flakes into continuous structures or film are first observed and explained. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-05-09 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/27639]  |
| 专题 | 化学研究所_有机固体实验室 |
| 作者单位 | 1.Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150080, Peoples R China 2.Harbin Inst Technol, Minist Educ, Key Lab Microsyst & Microstruct, Harbin 150080, Peoples R China 3.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Lifeng,Wu, Bin,Jiang, Lili,et al. Growth and Etching of Monolayer Hexagonal Boron Nitride[J]. ADVANCED MATERIALS,2015,27(33):4858-4864. |
| APA | Wang, Lifeng.,Wu, Bin.,Jiang, Lili.,Chen, Jisi.,Li, Yongtao.,...&Liu, Yunqi.(2015).Growth and Etching of Monolayer Hexagonal Boron Nitride.ADVANCED MATERIALS,27(33),4858-4864. |
| MLA | Wang, Lifeng,et al."Growth and Etching of Monolayer Hexagonal Boron Nitride".ADVANCED MATERIALS 27.33(2015):4858-4864. |
入库方式： OAI收割
来源：化学研究所
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