High-performance polymer field-effect transistors fabricated with low-bandgap DPP-based semiconducting materials
文献类型：期刊论文
| 作者 | Mao, Zupan1,2; Zhang, Weifeng1; Huang, Jianyao1,2; Shi, Keli1; Gao, Dong1,2; Chen, Zhihui1,2; Yu, Gui1 |
| 刊名 | POLYMER CHEMISTRY
 |
| 出版日期 | 2015 |
| 卷号 | 6期号:36页码:6457-6464 |
| 英文摘要 | A series of new pi-conjugated D-A copolymers PDMOTT-n (n = 118, 122, 320, and 420) containing a diketopyrrolopyrrole unit and a 3,6-dimethoxythieno[3,2-b]thiophene moiety was designed and synthesized, and their field-effect properties were characterized. The polymers PDMOTT-n have a low bandgap of 1.27 eV and exhibit a broad absorption. Solution-processed field-effect transistors based on these polymers were fabricated with a bottom-gate/bottom-contact configuration and demonstrated typical p-type charge transporting properties. Of these, PDMOTT-420 with the longest alkyl side chains and having the longest distance between the branching point of the alkyl side chain and pi-conjugated backbone of the polymer, exhibited the best carrier transporting performance with a hole mobility of 2.01 cm(2) V-1 s(-1) and with an on/off current ratio of 10(4)-10(5). The characterization results of grazing incidence X-ray diffraction and tapping-mode atomic force microscopy showed that the thin film of the polymer PDMOTT-420 forms larger grains and more useful nanofibrillar intercalated structures and owns shorter pi-pi stacking distance and better crystallization than those of another three polymers. These results could help us to better understand the structure-property relationship of polymer semiconductors and to design novel pi-conjugated polymers for high-performance field-effect transistors. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-05-09 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/27688]  |
| 专题 | 化学研究所_有机固体实验室 |
| 作者单位 | 1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Mao, Zupan,Zhang, Weifeng,Huang, Jianyao,et al. High-performance polymer field-effect transistors fabricated with low-bandgap DPP-based semiconducting materials[J]. POLYMER CHEMISTRY,2015,6(36):6457-6464. |
| APA | Mao, Zupan.,Zhang, Weifeng.,Huang, Jianyao.,Shi, Keli.,Gao, Dong.,...&Yu, Gui.(2015).High-performance polymer field-effect transistors fabricated with low-bandgap DPP-based semiconducting materials.POLYMER CHEMISTRY,6(36),6457-6464. |
| MLA | Mao, Zupan,et al."High-performance polymer field-effect transistors fabricated with low-bandgap DPP-based semiconducting materials".POLYMER CHEMISTRY 6.36(2015):6457-6464. |
入库方式： OAI收割
来源：化学研究所
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