Naphtho[2,1-b:3,4-b ']bisthieno[3,2-b][1]benzothiophene-based semiconductors for organic field-effect transistors
文献类型：期刊论文
| 作者 | Li, Zhaoguang1,2; Zhang, Ji3; Zhang, Kai1,2; Zhang, Weifeng3; Guo, Lei1,2; Huang, Jianyao3; Yu, Gui3; Wong, Man Shing1,2 |
| 刊名 | JOURNAL OF MATERIALS CHEMISTRY C
 |
| 出版日期 | 2015 |
| 卷号 | 3期号:31页码:8024-8029 |
| 英文摘要 | A novel series of air-stable and highly extended p-conjugated naphtho[2,1-b:3,4-b']bisthieno[3,2-b][1]benzothiophene derivatives, NBTBT-n (n = 6, 8, 10, and 12) and NBTBTF-10, was developed. The influence of various alkoxy-side groups including straight chain with different chain lengths and branched chain on the FET device performance was also investigated. There was a progressive enhancement in the NBTBT-based OFET device performance with an increase in the annealing temperature. The OFET devices based on NBTBT-10 fabricated by vacuum deposition exhibited the best performance with a hole mobility of 0.25 cm(2) V-1 s(-1) and an on/off ratio of 10(5)-10(6) after annealing at 220 degrees C. In addition, fluorinated naphtho[2,1-b: 3,4-b']bisthieno[3,2-b][1] benzothiophene, NBTBTF-10, showed good p-type transistor behaviour with a hole mobility of 0.24 cm(2) V-1 s(-1) and an on/off ratio of 10(6)-10(7) which was achieved at a lower annealing temperature of 140 degrees C, suggesting the important contribution of the dipole-dipole interactions induced by the fluorine atoms in the molecular packing. As a result, the naphtho[2,1-b:3,4-b']bisthieno[3,2-b][1]benzothiophene framework shows promise as a useful building block to construct organic semiconductors for next-generation high performance organic electronics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-05-09 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/27767]  |
| 专题 | 化学研究所_有机固体实验室 |
| 作者单位 | 1.Hong Kong Baptist Univ, Dept Chem, Inst Mol Funct Mat, Kowloon Tong, Hong Kong, Peoples R China 2.Hong Kong Baptist Univ, Inst Adv Mat, Kowloon Tong, Hong Kong, Peoples R China 3.Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Zhaoguang,Zhang, Ji,Zhang, Kai,et al. Naphtho[2,1-b:3,4-b ']bisthieno[3,2-b][1]benzothiophene-based semiconductors for organic field-effect transistors[J]. JOURNAL OF MATERIALS CHEMISTRY C,2015,3(31):8024-8029. |
| APA | Li, Zhaoguang.,Zhang, Ji.,Zhang, Kai.,Zhang, Weifeng.,Guo, Lei.,...&Wong, Man Shing.(2015).Naphtho[2,1-b:3,4-b ']bisthieno[3,2-b][1]benzothiophene-based semiconductors for organic field-effect transistors.JOURNAL OF MATERIALS CHEMISTRY C,3(31),8024-8029. |
| MLA | Li, Zhaoguang,et al."Naphtho[2,1-b:3,4-b ']bisthieno[3,2-b][1]benzothiophene-based semiconductors for organic field-effect transistors".JOURNAL OF MATERIALS CHEMISTRY C 3.31(2015):8024-8029. |
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来源：化学研究所
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