Themed issue on "Organic field-effect transistors: interfacial phenomena and electronic properties''
文献类型:期刊论文
作者 | Krishnamoorthy, K.1; Facchetti, Antonio F.2,3; Hu, Wenping4; Bao, Zhenan5 |
刊名 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS
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出版日期 | 2015 |
卷号 | 17期号:40页码:26509-26511 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2016-05-09 |
源URL | [http://ir.iccas.ac.cn/handle/121111/28900] ![]() |
专题 | 化学研究所_有机固体实验室 |
作者单位 | 1.CSIR, Natl Chem Lab, Pune 411008, Maharashtra, India 2.Polyera Corp, Evanston, IL 60208 USA 3.Northwest Univ, Evanston, IL 60208 USA 4.Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China 5.Stanford Univ, Stanford, CA 94305 USA |
推荐引用方式 GB/T 7714 | Krishnamoorthy, K.,Facchetti, Antonio F.,Hu, Wenping,et al. Themed issue on "Organic field-effect transistors: interfacial phenomena and electronic properties''[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2015,17(40):26509-26511. |
APA | Krishnamoorthy, K.,Facchetti, Antonio F.,Hu, Wenping,&Bao, Zhenan.(2015).Themed issue on "Organic field-effect transistors: interfacial phenomena and electronic properties''.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,17(40),26509-26511. |
MLA | Krishnamoorthy, K.,et al."Themed issue on "Organic field-effect transistors: interfacial phenomena and electronic properties''".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 17.40(2015):26509-26511. |
入库方式: OAI收割
来源:化学研究所
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