A case study of failure analysis on ESD-induced degradation of 405nm LD
文献类型：会议论文
| 作者 | Liu, Hongmin; Li, Zhe; Weng, Zheng; Jiang, Hao; Shen, Yuanting |
| 出版日期 | 2015 |
| 会议名称 | 41st International Symposium for Testing and Failure Analysis, ISTFA 2015 |
| 会议日期 | November 1, 2015 - November 5, 2015 |
| 会议地点 | Portland, OR, United states |
| 页码 | 227-229 |
| 英文摘要 | A field failing Ondax's 405nm Laser Diode (LD) was under failure analysis. The failure analysis (FA) results showed that the LD was very sensitive to ESD and the degradation was ESD induced. Some mechanism explanation is also given in this paper. Copyright © 2015 ASM International® All rights reserved. |
| 收录类别 | EI |
| 会议录 | Conference Proceedings from the International Symposium for Testing and Failure Analysis
 |
| 会议录出版者 | ASM International |
| 语种 | 英语 |
| ISBN号 | 9781627081023 |
| 源URL | [http://ir.nssc.ac.cn/handle/122/5407]  |
| 专题 | 国家空间科学中心_保障部/保障与试验验证中心 |
| 作者单位 | 保障部/保障与试验验证中心 |
| 推荐引用方式 GB/T 7714 | Liu, Hongmin,Li, Zhe,Weng, Zheng,et al. A case study of failure analysis on ESD-induced degradation of 405nm LD[C]. 见:41st International Symposium for Testing and Failure Analysis, ISTFA 2015. Portland, OR, United states. November 1, 2015 - November 5, 2015. |
入库方式： OAI收割
来源：国家空间科学中心
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