p-Layer bandgap engineering for high efficiency thin film silicon solar cells
文献类型：期刊论文
| 作者 | Liu, Xiaojing1,2; Zi, Wei1,2; Liu, Shengzhong (Frank)1,2,3 |
| 刊名 | materials science in semiconductor processing
 |
| 出版日期 | 2015-11-01 |
| 卷号 | 39页码:192-199 |
| 关键词 | p-Layer Ellipsometry V-oc Solar cell Band gap |
| 英文摘要 | spectroscopic ellipsometry (se), high resolution transmission electron microscopy (hrtem), atomic force microscopy (afm) and optical transmittance measurements were used to study and establish a correlation between the open-circuit voltage (v-oc) of solar cells and the p-layer optical band gap (e-p). it is found that the ellipsometry measurement can be used as an inline non-destructive diagnostic tool for p-layer deposition in commercial operation. the analysis of ellipsometric spectra, together with the optical transmittance data, shows that the best p-layer appears to be very fine nanocrystallites with an e-p 1.95 ev. hrtem measurements reveal that the best p-layer is composed of nanocrystallites similar to 9 nm in size. it is also found that the p-layer exhibits very good transmittance, as high as similar to 91.6% at similar to 650 nm. these results have guided us to achieve high v-oc value 1.03 v for thin film silicon based single junction solar cell. (c) 2015 elsevier ltd. all rights reserved. |
| WOS标题词 | science & technology ; technology ; physical sciences |
| 类目[WOS] | engineering, electrical & electronic ; materials science, multidisciplinary ; physics, applied ; physics, condensed matter |
| 研究领域[WOS] | engineering ; materials science ; physics |
| 关键词[WOS] | time spectroscopic ellipsometry ; real-time ; optical functions ; phase-diagrams ; technology ; optimization ; improvement ; deposition ; interface ; progress |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000361774100027 |
| 公开日期 | 2016-05-09 |
| 源URL | [http://cas-ir.dicp.ac.cn/handle/321008/146564]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 作者单位 | 1.Natl Minist Educ, Key Lab Appl Surface & Colloid Chem, Xian 710062, Peoples R China 2.Shaanxi Normal Univ, Sch Mat Sci & Engn, Inst Adv Energy Mat, Xian 710062, Peoples R China 3.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian Natl Lab Clean Energy, Dalian 116023, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Xiaojing,Zi, Wei,Liu, Shengzhong . p-Layer bandgap engineering for high efficiency thin film silicon solar cells[J]. materials science in semiconductor processing,2015,39:192-199. |
| APA | Liu, Xiaojing,Zi, Wei,&Liu, Shengzhong .(2015).p-Layer bandgap engineering for high efficiency thin film silicon solar cells.materials science in semiconductor processing,39,192-199. |
| MLA | Liu, Xiaojing,et al."p-Layer bandgap engineering for high efficiency thin film silicon solar cells".materials science in semiconductor processing 39(2015):192-199. |
入库方式： OAI收割
来源：大连化学物理研究所
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