中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Growth defects in flux grown RbTiOAsO4 crystals observed with white-beam synchrotron radiation topography

文献类型:期刊论文

作者Hu, XB; Wang, JY; Cui, WH; Guan, QC; Song, RB; Wei, JQ; Liu, YG; Jiang, JH; Tian, YL; Jiang JH(蒋建华)
刊名JOURNAL OF CRYSTAL GROWTH
出版日期1999
卷号205期号:3页码:323-327
关键词dislocation growth band growth sector boundary
通讯作者Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China ; Inst High Energy Phys, Beijing Synchrotron Radiat Lab, Beijing 100039, Peoples R China
英文摘要The growth defects in flux grown RbTiOAsO4 crystal have been investigated by white-beam synchrotron radiation topography. It is found that growth sector boundaries are the primary growth defects and they show strong X-ray kinematical contrast in the topograph. All the dislocations are growth induced and appear only in the near capping region. The area away from the capping region is nearly dislocation free. Growth bands show weak contrast in the X-ray topograph. which implies that the impurity contents are relatively low in various growth sectors and each growth sector is uniform in composition. (C) 1999 Elsevier Science B.V. All rights reserved.
学科主题Crystallography; Materials Science; Physics
类目[WOS]Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]Crystallography ; Materials Science ; Physics
原文出处SCI
语种英语
WOS记录号WOS:000082217200011
源URL[http://ir.ihep.ac.cn/handle/311005/236975]  
专题高能物理研究所_多学科研究中心
作者单位中国科学院高能物理研究所
推荐引用方式
GB/T 7714
Hu, XB,Wang, JY,Cui, WH,et al. Growth defects in flux grown RbTiOAsO4 crystals observed with white-beam synchrotron radiation topography[J]. JOURNAL OF CRYSTAL GROWTH,1999,205(3):323-327.
APA Hu, XB.,Wang, JY.,Cui, WH.,Guan, QC.,Song, RB.,...&田玉莲.(1999).Growth defects in flux grown RbTiOAsO4 crystals observed with white-beam synchrotron radiation topography.JOURNAL OF CRYSTAL GROWTH,205(3),323-327.
MLA Hu, XB,et al."Growth defects in flux grown RbTiOAsO4 crystals observed with white-beam synchrotron radiation topography".JOURNAL OF CRYSTAL GROWTH 205.3(1999):323-327.

入库方式: OAI收割

来源:高能物理研究所

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