Growth defects in flux grown RbTiOAsO4 crystals observed with white-beam synchrotron radiation topography
文献类型:期刊论文
作者 | Hu, XB; Wang, JY![]() |
刊名 | JOURNAL OF CRYSTAL GROWTH
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出版日期 | 1999 |
卷号 | 205期号:3页码:323-327 |
关键词 | dislocation growth band growth sector boundary |
通讯作者 | Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China ; Inst High Energy Phys, Beijing Synchrotron Radiat Lab, Beijing 100039, Peoples R China |
英文摘要 | The growth defects in flux grown RbTiOAsO4 crystal have been investigated by white-beam synchrotron radiation topography. It is found that growth sector boundaries are the primary growth defects and they show strong X-ray kinematical contrast in the topograph. All the dislocations are growth induced and appear only in the near capping region. The area away from the capping region is nearly dislocation free. Growth bands show weak contrast in the X-ray topograph. which implies that the impurity contents are relatively low in various growth sectors and each growth sector is uniform in composition. (C) 1999 Elsevier Science B.V. All rights reserved. |
学科主题 | Crystallography; Materials Science; Physics |
类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
研究领域[WOS] | Crystallography ; Materials Science ; Physics |
原文出处 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000082217200011 |
源URL | [http://ir.ihep.ac.cn/handle/311005/236975] ![]() |
专题 | 高能物理研究所_多学科研究中心 |
作者单位 | 中国科学院高能物理研究所 |
推荐引用方式 GB/T 7714 | Hu, XB,Wang, JY,Cui, WH,et al. Growth defects in flux grown RbTiOAsO4 crystals observed with white-beam synchrotron radiation topography[J]. JOURNAL OF CRYSTAL GROWTH,1999,205(3):323-327. |
APA | Hu, XB.,Wang, JY.,Cui, WH.,Guan, QC.,Song, RB.,...&田玉莲.(1999).Growth defects in flux grown RbTiOAsO4 crystals observed with white-beam synchrotron radiation topography.JOURNAL OF CRYSTAL GROWTH,205(3),323-327. |
MLA | Hu, XB,et al."Growth defects in flux grown RbTiOAsO4 crystals observed with white-beam synchrotron radiation topography".JOURNAL OF CRYSTAL GROWTH 205.3(1999):323-327. |
入库方式: OAI收割
来源:高能物理研究所
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