Influence of various annealing temperatures on microstructure evolution of oxidized Ni/Au ohmic contact to p-GaN studied by synchrotron X-ray diffraction
文献类型：期刊论文
| 作者 | Hu, CY; Qin, ZX; Chen, ZZ; Yang, ZJ; Yu, TJ; Hu, XD; Wu, K; Jia, QJ ; Wang, HH; Zhang, GY
|
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2005 |
| 卷号 | 285期号:3页码:333-338 |
| 关键词 | x-ray diffraction gallium compounds metals nitrides semiconducting III-V materials |
| 通讯作者 | Peking Univ, Sch Phys, Natl Key Lab Artificial Microstruct & Mesoscop Ph, Beijing 100871, Peoples R China ; Chinese Acad Sci, Beijing Synchrotron Radiat Facil, Inst High Energy Phys, Beijing 100037, Peoples R China |
| 英文摘要 | The influence of various annealing temperatures on microstructure evolution of oxidized Ni(20 nm)/Au(20 nm) ohmic contact to p-GaN was studied by synchrotron X-ray diffraction (XRD). In association with the variation of the specific contact resistance (rho(c)), it is observed that NiO and An began to form partially epitaxial structure on p-GaN at 450 degrees C, which played a critical role in lowering down the rho(c). At 500 degrees C, the epitaxial structure of An and NiO was improved further while the lowest rho(c) was reached. However, at 600 degrees C, the epitaxial structure of NiO was transformed to polycrystalline structure again with a sharp increase of rho(c). Therefore, it is suggested that the degradation of the epitaxial structure of NiO is responsible for the sharp increase of rho(c). (c) 2005 Elsevier B.V. All rights reserved. |
| 学科主题 | Crystallography; Materials Science; Physics |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Crystallography ; Materials Science ; Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000233389000006 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/237030]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Hu, CY,Qin, ZX,Chen, ZZ,et al. Influence of various annealing temperatures on microstructure evolution of oxidized Ni/Au ohmic contact to p-GaN studied by synchrotron X-ray diffraction[J]. JOURNAL OF CRYSTAL GROWTH,2005,285(3):333-338. |
| APA | Hu, CY.,Qin, ZX.,Chen, ZZ.,Yang, ZJ.,Yu, TJ.,...&王焕华.(2005).Influence of various annealing temperatures on microstructure evolution of oxidized Ni/Au ohmic contact to p-GaN studied by synchrotron X-ray diffraction.JOURNAL OF CRYSTAL GROWTH,285(3),333-338. |
| MLA | Hu, CY,et al."Influence of various annealing temperatures on microstructure evolution of oxidized Ni/Au ohmic contact to p-GaN studied by synchrotron X-ray diffraction".JOURNAL OF CRYSTAL GROWTH 285.3(2005):333-338. |
入库方式： OAI收割
来源：高能物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。