Influence of sulfidation ambience on the properties of nanocrystalline ZnS films prepared by sulfurizing the as-sputtered ZnO films
文献类型：期刊论文
| 作者 | Zhang RG(张仁刚); Wang BY(王宝义) ; Zhang H(张慧); Wei L(魏龙); Zhang, RG; Wang, BY; Zhang, H; Wei, L
|
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2005 |
| 卷号 | 245期号:1-4页码:340-345 |
| 关键词 | ZnS films ZnO films sulfidation |
| 通讯作者 | Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100039, Peoples R China |
| 英文摘要 | Nanocrystalline ZnS films have been prepared on glass and quartz substrates by sulfurizing the as-sputtered ZnO films at 500 ° C in H2S or sulfur-vapor. The films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive analysis of X-ray (EDX) and UV-visible transmission spectra. It is found that the total conversion of ZnO films in sulfur-vapor to the hexagonal ZnS films requires 11 h much longer than that in H2S, due to the low S content in sulfur-vapor. And the high ZnS (0 0 2) preferred orientation can be observed for ZnS films formed in H2S or low pressure sulfur-vapor. The results also show that ZnS films formed in sulfur-vapor have about 200 nm grains greater than those formed in H2S, because the solid-phase recrystallization during the sulfidation process is favorable in sulfur-vapor. Besides, the great broadening of the absorption edge in the optical transmission spectra, and the small band-gap energies compared to that of ZnS films formed in H2S, are obtained for ZnS films produced in sulfur-vapor, which can arise from existence of some ZnO and residual sulfur phase, and sulfur interstitial atoms in the films. © 2004 Elsevier B.V. All rights reserved. |
| 学科主题 | Chemistry; Materials Science; Physics |
| 类目[WOS] | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 研究领域[WOS] | Chemistry ; Materials Science ; Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000228904900046 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/237057]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Zhang RG,Wang BY,Zhang H,et al. Influence of sulfidation ambience on the properties of nanocrystalline ZnS films prepared by sulfurizing the as-sputtered ZnO films[J]. APPLIED SURFACE SCIENCE,2005,245(1-4):340-345. |
| APA | 张仁刚.,王宝义.,张慧.,魏龙.,Zhang, RG.,...&Wei, L.(2005).Influence of sulfidation ambience on the properties of nanocrystalline ZnS films prepared by sulfurizing the as-sputtered ZnO films.APPLIED SURFACE SCIENCE,245(1-4),340-345. |
| MLA | 张仁刚,et al."Influence of sulfidation ambience on the properties of nanocrystalline ZnS films prepared by sulfurizing the as-sputtered ZnO films".APPLIED SURFACE SCIENCE 245.1-4(2005):340-345. |
入库方式： OAI收割
来源：高能物理研究所
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