Growth and characterization of LiGaO2 substrate crystal for GaN epitaxy
文献类型：期刊论文
| 作者 | Xu, K; Deng, PZ; Xu, J ; Zhou, GQ; Liu, WJ; Tian, YL; Tian YL(田玉莲)
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| 刊名 | JOURNAL OF CRYSTAL GROWTH
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| 出版日期 | 2000 |
| 卷号 | 216期号:1-4页码:343-347 |
| 关键词 | crystal growth LiGaO2 GaN substrate defect |
| 通讯作者 | Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China ; Nanjing Univ, Natl Key Lab Solid State Struct & Phys, Nanjing 210008, Peoples R China ; Chinese Acad Sci, Beijing Inst High Energy Phys, Beijing, Peoples R China |
| 英文摘要 | We report Czochralski growth of LiGaO2 single crystals, which are promising substrate materials for the epitaxy of GaN since the lattice mismatch between LiGaO2 and GaN is only 0.9%. The dislocation etching pits morphologies and distribution characteristics were well revealed by chemical etching technique. Transmission electron microscopy (TEM) observations showed that gamma-Ga2O3 inclusions tended to emerge in LiGaO2 crystals owing to the volatilization of Li2O during growth process. Therefore, many edged dislocations were induced, which usually lie on (001) plane. The amount of gamma-Ga2O3 inclusions is closely related to growth parameters. X-ray topography shows that an interface parallel to (001) tends to form in the LiGaO2 crystals pulled along (100). The two parts aside the (001) interface were slightly rotated around the interface normal. The crystal quality can be improved by using starting materials with excess of Li2CO3 and adopting appropriate growth parameters. (C) 2000 Elsevier Science B.V. All rights reserved. |
| 学科主题 | Crystallography; Materials Science; Physics |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Crystallography ; Materials Science ; Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000088286000047 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/237069]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Xu, K,Deng, PZ,Xu, J,et al. Growth and characterization of LiGaO2 substrate crystal for GaN epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2000,216(1-4):343-347. |
| APA | Xu, K.,Deng, PZ.,Xu, J.,Zhou, GQ.,Liu, WJ.,...&田玉莲.(2000).Growth and characterization of LiGaO2 substrate crystal for GaN epitaxy.JOURNAL OF CRYSTAL GROWTH,216(1-4),343-347. |
| MLA | Xu, K,et al."Growth and characterization of LiGaO2 substrate crystal for GaN epitaxy".JOURNAL OF CRYSTAL GROWTH 216.1-4(2000):343-347. |
入库方式： OAI收割
来源：高能物理研究所
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