The growth defects in self-frequency-doubling laser crystal NdxY1-xAl3(BO3)(4)
文献类型：期刊论文
| 作者 | Hu, XB; Jiang, SS; Huang, XR; Liu, WJ ; Ge, CZ; Wang, JY; Pan, HF; Jiang, JH; Wang, ZG; Jiang JH(蒋建华)
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| 刊名 | JOURNAL OF CRYSTAL GROWTH
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| 出版日期 | 1997 |
| 卷号 | 173期号:3-4页码:460-466 |
| 关键词 | growth defect twins synchrotron radiation topography chemical etching NdxY1-xAl3(BO3)(4) crystal |
| 通讯作者 | SHANDONG UNIV,INST CRYSTAL MAT,JINAN 250100,PEOPLES R CHINA ; INST HIGH ENERGY PHYS,BEIJING SYNCHROTRON RADIAT LAB,BEIJING 100039,PEOPLES R CHINA |
| 英文摘要 | The growth defects in flux-grown NdxY1-xAl3(BO3)(4) (NYAB) single crystals have been investigated by means of chemical etching and synchrotron radiation techniques. The band-shaped and polysynthetic twins were detected by optical microscopy due to the difference in etching rates between the host crystal and the twin. In the meantime, the orientation and symmetry of the twins were analyzed from their etching patterns. A large number of etch pits with regular shapes were also found on the surface, and these etch pits correspond to outcrops of the dislocations originating from the seed crystal or inclusions. |
| 学科主题 | Crystallography; Materials Science; Physics |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Crystallography ; Materials Science ; Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:A1997XC98100030 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/237574]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Hu, XB,Jiang, SS,Huang, XR,et al. The growth defects in self-frequency-doubling laser crystal NdxY1-xAl3(BO3)(4)[J]. JOURNAL OF CRYSTAL GROWTH,1997,173(3-4):460-466. |
| APA | Hu, XB.,Jiang, SS.,Huang, XR.,Liu, WJ.,Ge, CZ.,...&王州光.(1997).The growth defects in self-frequency-doubling laser crystal NdxY1-xAl3(BO3)(4).JOURNAL OF CRYSTAL GROWTH,173(3-4),460-466. |
| MLA | Hu, XB,et al."The growth defects in self-frequency-doubling laser crystal NdxY1-xAl3(BO3)(4)".JOURNAL OF CRYSTAL GROWTH 173.3-4(1997):460-466. |
入库方式： OAI收割
来源：高能物理研究所
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