Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers
文献类型：期刊论文
| 作者 | Deng, JJ; Zhao, JH; Bi, JF; Zheng, YH; Jia, QJ ; Niu, ZC; Wu, XG; Zheng, HZ; Jia QJ(贾全杰)
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| 刊名 | CHINESE PHYSICS LETTERS
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| 出版日期 | 2006 |
| 卷号 | 23期号:2页码:493-496 |
| 通讯作者 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100039, Peoples R China |
| 英文摘要 | Zincblende CrSb (zb-CrSb) layers with room-temperature ferromagnetism have been grown on relaxed and strained (In,Ga)As buffer layers epitaxially prepared on (001) GaAs substrates by molecular-beam epitaxy. The structural characterizations of CrSb layers fabricated under the two cases are studied by using synchrotron grazing incidence x-ray diffraction (GID). The results of GID experiments indicate that no sign of second phase exists in all the zb-CrSb layers. Superconducting quantum interference device measurements demonstrate that the thickness of zb-CrSb layers grown on both relaxed and strained (In,Ga)As buffer layers can be increased to similar to 12 monolayers (similar to 3.6nm), compared to similar to 3 monolayers (similar to 1nm) on GaAs directly. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000235255200061 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/237707]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Deng, JJ,Zhao, JH,Bi, JF,et al. Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers[J]. CHINESE PHYSICS LETTERS,2006,23(2):493-496. |
| APA | Deng, JJ.,Zhao, JH.,Bi, JF.,Zheng, YH.,Jia, QJ.,...&贾全杰.(2006).Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers.CHINESE PHYSICS LETTERS,23(2),493-496. |
| MLA | Deng, JJ,et al."Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers".CHINESE PHYSICS LETTERS 23.2(2006):493-496. |
入库方式： OAI收割
来源：高能物理研究所
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