DETERMINATION OF DEPTH PROFILING OF METAL TRACE IMPURITIES ON SI SURFACE USING TOTAL REFLECTION X-RAY-FLUORESCENCE
文献类型：期刊论文
| 作者 | Fan QM(范钦敏); Liu YW(刘亚雯); LI, DL; Wei CL(魏诚林); FAN, QM; LIU, YW; LI, DL; WEI, CL |
| 刊名 | FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY
 |
| 出版日期 | 1993 |
| 卷号 | 345期号:7页码:518-520 |
| 英文摘要 | Total reflection X-ray fluorescence (TXRF) is used for non-destructive determination of depth profiling. A numerical processing is presented as impurity quantification in the continuum excitation TXRF without using standards. Dependences of concentration of impurities on depths ranging from a few tens to thousands Angstroms are given for Fe and Cu on Si-wafer. The detection limits are in the range of 10(10) atoms/cm2. The method was checked with Secondary Ion Mass Spectrometry (SIMS) and the agreement is reasonably good. |
| 学科主题 | Chemistry |
| 类目[WOS] | Chemistry, Analytical |
| 研究领域[WOS] | Chemistry |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:A1993KQ58000008 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/237797]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Fan QM,Liu YW,LI, DL,et al. DETERMINATION OF DEPTH PROFILING OF METAL TRACE IMPURITIES ON SI SURFACE USING TOTAL REFLECTION X-RAY-FLUORESCENCE[J]. FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY,1993,345(7):518-520. |
| APA | 范钦敏.,刘亚雯.,LI, DL.,魏诚林.,FAN, QM.,...&WEI, CL.(1993).DETERMINATION OF DEPTH PROFILING OF METAL TRACE IMPURITIES ON SI SURFACE USING TOTAL REFLECTION X-RAY-FLUORESCENCE.FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY,345(7),518-520. |
| MLA | 范钦敏,et al."DETERMINATION OF DEPTH PROFILING OF METAL TRACE IMPURITIES ON SI SURFACE USING TOTAL REFLECTION X-RAY-FLUORESCENCE".FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY 345.7(1993):518-520. |
入库方式： OAI收割
来源：高能物理研究所
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