Pb surfactant-assisted Co film growth on Cu(111)
文献类型：期刊论文
| 作者 | Xu, MC; Qian HJ(钱海杰) ; Liu FQ(刘凤琴); Kui RX(奎热西); Qian, HJ; Liu, FQ; Krash, I; Lai, WY; Wu, SC
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| 刊名 | CHINESE PHYSICS LETTERS
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| 出版日期 | 2000 |
| 卷号 | 17期号:8页码:595-597 |
| 通讯作者 | Chinese Acad Sci, Inst Phys, Ctr Condensed Matter Phys, State Key Lab Magnetism, Beijing 100080, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Synchrotron Radiat Lab, Beijing 100039, Peoples R China ; Peking Univ, Dept Phys, Beijing 100871, Peoples R China |
| 英文摘要 | Surfactant-assisted Co film epitaxy growth on Cu (111) using Pb as a surfactant was studied by means of Auger electron spectra and synchrotron radiation photoemission spectra. The results reveal that with increasing the Co thickness most of the Pb atoms always float on the surface. Compared with 0.7 ML (monolayer) Pb, the Co film with 1.5 ML Pb surfactant has more layer-by-layer growth on Cu(111). The predeposited Pb layer can suppress the intralayer diffusion on the Cu(111) surface and effectively increase the Co island density at the initial stage of Co growth. On the contrary, a Pb-Co surface alloy was found during the Co film growth; this may hinder the interlayer diffusion of the deposited Co atoms, which is unfavorable to the layer-by-layer growth. The Pb-Co is also considered to be the main reason why some Pb atoms have been buried in the Co films. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000088961900018 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/238064]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Xu, MC,Qian HJ,Liu FQ,et al. Pb surfactant-assisted Co film growth on Cu(111)[J]. CHINESE PHYSICS LETTERS,2000,17(8):595-597. |
| APA | Xu, MC.,钱海杰.,刘凤琴.,奎热西.,Qian, HJ.,...&Wu, SC.(2000).Pb surfactant-assisted Co film growth on Cu(111).CHINESE PHYSICS LETTERS,17(8),595-597. |
| MLA | Xu, MC,et al."Pb surfactant-assisted Co film growth on Cu(111)".CHINESE PHYSICS LETTERS 17.8(2000):595-597. |
入库方式： OAI收割
来源：高能物理研究所
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