Extremely narrow Sb delta-doped epitaxial layer characterized by x-ray reflectivity
文献类型：期刊论文
| 作者 | Jiang, ZM; Xiu, LS; Jiang, XM ; Zheng, WL; Lu, XK; Zhu, HJ; Zhang, XJ; Wang, X; Xiu LS(修立松); Jiang XM(姜晓明)
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| 刊名 | CHINESE PHYSICS LETTERS
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| 出版日期 | 1997 |
| 卷号 | 14期号:9页码:686-689 |
| 通讯作者 | CHINESE ACAD SCI,SYNCHROTRON RADIAT LAB,INST HIGH ENERGY PHYS,BEIJING 100039,PEOPLES R CHINA ; FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA |
| 英文摘要 | An Sb delta doping layer in silicon is grown at the temperature of 300 degrees C by silicon molecular beam epitaxy and characterized by the small angle x-ray reflectivity measurement using synchrotron radiation beam. The oscillations of the reflectivity caused by dopant Sb at Q as large as 14.5 are detected. Simulation of this curve as a whole shows that the total amount of dopant Sb is 0.15 monolayer and is restricted to two atomic layers. An extremely narrow Sb delta doping structure without Sb segregation is thus obtained at the growth temperature of 300 degrees C as verified by the experiment. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:A1997YC66000013 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/238269]  |
| 专题 | 高能物理研究所_多学科研究中心 中国科学院高能物理研究所_人力资源处 中国科学院高能物理研究所_中国散裂中子源 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Jiang, ZM,Xiu, LS,Jiang, XM,et al. Extremely narrow Sb delta-doped epitaxial layer characterized by x-ray reflectivity[J]. CHINESE PHYSICS LETTERS,1997,14(9):686-689. |
| APA | Jiang, ZM.,Xiu, LS.,Jiang, XM.,Zheng, WL.,Lu, XK.,...&郑文莉.(1997).Extremely narrow Sb delta-doped epitaxial layer characterized by x-ray reflectivity.CHINESE PHYSICS LETTERS,14(9),686-689. |
| MLA | Jiang, ZM,et al."Extremely narrow Sb delta-doped epitaxial layer characterized by x-ray reflectivity".CHINESE PHYSICS LETTERS 14.9(1997):686-689. |
入库方式： OAI收割
来源：高能物理研究所
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