Vacancy-type defects near Al surface studied by slow positron annihilation spectroscopy before and after He+ implantation
文献类型：期刊论文
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| 作者 | Chen, CA; Xiang, X ; Sun, Y; Zhou, CL; Ma, CX; Wei, L; Wei L(魏龙)
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| 刊名 | FUSION ENGINEERING AND DESIGN
 ; FUSION ENGINEERING AND DESIGN
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| 出版日期 | 2010 ; 2010 |
| 卷号 | 85期号:5页码:734-738 |
| 关键词 | Al Helium Slow positron annihilation spectroscopy Vacancy-type defects Al Helium Slow positron annihilation spectroscopy Vacancy-type defects |
| DOI | 10.1016/j.fusengdes.2010.04.050 |
| 通讯作者 | [Chen, C. A. ; Xiang, X. ; Sun, Y.] China Acad Engn Phys, Mianyang 621900, Sichuan, Peoples R China ; [Zhou, C. L. ; Ma, C. X. ; Wei, L.] Chinese Acad Sci, State Key Lab Nucl Anal, Inst High Energet Phys, Beijing 100039, Peoples R China ; [Chen, C. A. ; Xiang, X. ; Sun, Y.] China Acad Engn Phys, Mianyang 621900, Sichuan, Peoples R China ; [Zhou, C. L. ; Ma, C. X. ; Wei, L.] Chinese Acad Sci, State Key Lab Nucl Anal, Inst High Energet Phys, Beijing 100039, Peoples R China |
| 文献子类 | Article |
| 英文摘要 | The vacancy-type defects HenVm near Al surface before and after He+ implantation and their evolutions with annealing temperatures and aging time have been investigated by mono-energy slow positron annihilation spectroscopy (SPAS) with S parameters. The results show that many vacancies are produced during the sample preparation process, which can be re-occupied by Al atoms during annealing, Al+ and MeV He+ implantation. S parameters denote the concentration and size of HenVm clusters induced by He+ implantation in Al. The higher fluence of He implanted, the larger S parameters will be, indicating more HenVm clusters produced. S parameters decrease with the increase of annealing temperatures until the fastest change temperature, and then an opposite or minor change occurs depending on the fluence of He implanted in Al, showing that the concentration and size of HenVm clusters will vary with the annealing temperatures. Aged at RT for some time, the concentration and mean size of HenVm clusters in Al will get smaller and larger, respectively, resulting in the decrease of S parameters with the aging time. In conclusions, the evolution of vacancy-type defects HenVm near Al surface after He+ implantation depends on the annealing temperatures. He concentration and aging time. (C) 2010 Elsevier B.V. All rights reserved.; The vacancy-type defects HenVm near Al surface before and after He+ implantation and their evolutions with annealing temperatures and aging time have been investigated by mono-energy slow positron annihilation spectroscopy (SPAS) with S parameters. The results show that many vacancies are produced during the sample preparation process, which can be re-occupied by Al atoms during annealing, Al+ and MeV He+ implantation. S parameters denote the concentration and size of HenVm clusters induced by He+ implantation in Al. The higher fluence of He implanted, the larger S parameters will be, indicating more HenVm clusters produced. S parameters decrease with the increase of annealing temperatures until the fastest change temperature, and then an opposite or minor change occurs depending on the fluence of He implanted in Al, showing that the concentration and size of HenVm clusters will vary with the annealing temperatures. Aged at RT for some time, the concentration and mean size of HenVm clusters in Al will get smaller and larger, respectively, resulting in the decrease of S parameters with the aging time. In conclusions, the evolution of vacancy-type defects HenVm near Al surface after He+ implantation depends on the annealing temperatures. He concentration and aging time. (C) 2010 Elsevier B.V. All rights reserved. |
| 学科主题 | Nuclear Science & Technology ; Nuclear Science & Technology |
| 类目[WOS] | Nuclear Science & Technology |
| 研究领域[WOS] | Nuclear Science & Technology |
| URL标识 | 查看原文 |
| WOS研究方向 | Nuclear Science & Technology |
| 原文出处 | SCI |
| 语种 | 英语 ; 英语 |
| WOS记录号 | WOS:000281489500013 ; WOS:000281489500013 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/238385]  |
| 专题 | 高能物理研究所_多学科研究中心 高能物理研究所_粒子天体物理中心 高能物理研究所_核技术应用研究中心 高能物理研究所_管理与技术支持 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Chen, CA,Xiang, X,Sun, Y,et al. Vacancy-type defects near Al surface studied by slow positron annihilation spectroscopy before and after He+ implantation, Vacancy-type defects near Al surface studied by slow positron annihilation spectroscopy before and after He+ implantation[J]. FUSION ENGINEERING AND DESIGN, FUSION ENGINEERING AND DESIGN,2010, 2010,85, 85(5):734-738, 734-738. |
| APA | Chen, CA.,Xiang, X.,Sun, Y.,Zhou, CL.,Ma, CX.,...&魏龙.(2010).Vacancy-type defects near Al surface studied by slow positron annihilation spectroscopy before and after He+ implantation.FUSION ENGINEERING AND DESIGN,85(5),734-738. |
| MLA | Chen, CA,et al."Vacancy-type defects near Al surface studied by slow positron annihilation spectroscopy before and after He+ implantation".FUSION ENGINEERING AND DESIGN 85.5(2010):734-738. |
入库方式： OAI收割
来源：高能物理研究所
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