ELECTRONIC-STRUCTURE OF SN-DOPED C-60 FILM
文献类型：期刊论文
| 作者 | Deng JZ(邓俊琢); Xun Kun; Yao J(姚军); Liu FQ(刘凤琴); Wu SC(吴思诚); DENG, JZ; XUN, K; YAO, J; LUI, FQ; LU, SH |
| 刊名 | SOLID STATE COMMUNICATIONS
 |
| 出版日期 | 1992 |
| 卷号 | 84期号:8页码:793-798 |
| 通讯作者 | YANTAI UNIV,DEPT PHYS,YANTAI 264005,PEOPLES R CHINA ; BEIJING UNIV,DEPT PHYS,BEIJING 100871,PEOPLES R CHINA |
| 英文摘要 | The Sn-doped C60 film was obtained by annealing a 100angstrom thick C60 film with 6angstrom thick Sn overlayer at 200-degrees-C. Photoelectron spectra show that the ratio of Sn atoms to C60 molecules in the film is about 3:1. The valence band and C Is core level spectra of the Sn-doped C60 film are similar to that of C60 film. In contrast with the expectation of the reported superconductive phase of Sn-doped C60, no metallic condution band with a distinct Fermi level cutoff has been observed in the valence bands portion. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Condensed Matter |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:A1992JZ71100004 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/238501]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Deng JZ,Xun Kun,Yao J,et al. ELECTRONIC-STRUCTURE OF SN-DOPED C-60 FILM[J]. SOLID STATE COMMUNICATIONS,1992,84(8):793-798. |
| APA | 邓俊琢.,Xun Kun.,姚军.,刘凤琴.,吴思诚.,...&WU, SC.(1992).ELECTRONIC-STRUCTURE OF SN-DOPED C-60 FILM.SOLID STATE COMMUNICATIONS,84(8),793-798. |
| MLA | 邓俊琢,et al."ELECTRONIC-STRUCTURE OF SN-DOPED C-60 FILM".SOLID STATE COMMUNICATIONS 84.8(1992):793-798. |
入库方式： OAI收割
来源：高能物理研究所
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